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Transistors / Power Field-Effect Transistors / IPB029N06N3GE8187ATMA1
Datasheets
IPB029N06N3GE8187ATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3

Part Details for IPB029N06N3GE8187ATMA1 by Infineon Technologies AG

Results Overview of IPB029N06N3GE8187ATMA1 by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

IPB029N06N3GE8187ATMA1 Information

IPB029N06N3GE8187ATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IPB029N06N3GE8187ATMA1

Part # Distributor Description Stock Price Buy
DISTI # 448-IPB029N06N3GE8187ATMA1CT-ND
DigiKey MOSFET N-CH 60V 120A D2PAK Min Qty: 1 Lead time: 14 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) Temporarily Out of Stock
  • 1 $3.2300
  • 10 $2.1070
  • 100 $1.4650
  • 500 $1.1907
  • 1,000 $1.0579
$1.0579 / $3.2300 Buy Now
DISTI # IPB029N06N3GE8187ATMA1
Avnet Americas Trans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB029N06N3GE8187ATMA1) RoHS: Not Compliant Min Qty: 42000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Reel 0
  • 42,000 $1.1103
  • 44,000 $1.1002
  • 86,000 $1.0900
  • 210,000 $1.0799
  • 420,000 $1.0697
$1.0697 / $1.1103 Buy Now
Future Electronics OptiMOS 3 RoHS: Not Compliant pbFree: Yes Min Qty: 42000 Package Multiple: 1000 Lead time: 14 Weeks Container: Reel 0
Reel
  • 1,000 $1.0900
  • 2,000 $1.0800
  • 4,000 $1.0700
$1.0700 / $1.0900 Buy Now
Future Electronics OptiMOS 3 RoHS: Not Compliant pbFree: Yes Min Qty: 42000 Package Multiple: 1000 Lead time: 14 Weeks Container: Reel 0
Reel
  • 1,000 $1.0900
  • 2,000 $1.0800
  • 4,000 $1.0700
$1.0700 / $1.0900 Buy Now
Rochester Electronics XPB029N06 - Trench 40<-<100V RoHS: Compliant Status: Active Min Qty: 1 83
  • 1 $1.1800
  • 25 $1.1600
  • 100 $1.1100
  • 500 $1.0600
  • 1,000 $1.0000
$1.0000 / $1.1800 Buy Now

Part Details for IPB029N06N3GE8187ATMA1

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IPB029N06N3GE8187ATMA1 Part Data Attributes

Parametric Data
IPB029N06N3GE8187ATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPB029N06N3GE8187ATMA1 Infineon Technologies AG Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
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Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC, TO-263, D2PAK-3
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 235 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.0032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 480 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPB029N06N3GE8187ATMA1

This table gives cross-reference parts and alternative options found for IPB029N06N3GE8187ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB029N06N3GE8187ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IPP120N06S403AKSA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN IPB029N06N3GE8187ATMA1 vs IPP120N06S403AKSA1
IPB029N06N3G Infineon Technologies AG Check for Price Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 IPB029N06N3GE8187ATMA1 vs IPB029N06N3G
IPI120N06S403AKSA2 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN IPB029N06N3GE8187ATMA1 vs IPI120N06S403AKSA2
IPB029N06N3GATMA1 Infineon Technologies AG $1.1486 Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 IPB029N06N3GE8187ATMA1 vs IPB029N06N3GATMA1
IPP120N06S403AKSA2 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN IPB029N06N3GE8187ATMA1 vs IPP120N06S403AKSA2

IPB029N06N3GE8187ATMA1 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for IPB029N06N3GE8187ATMA1 is a TO-220 Full Pack 3-lead package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 4.5mm x 4.5mm.

  • To ensure reliability in high-temperature applications, it is recommended to follow the thermal design guidelines provided in the datasheet, including keeping the junction temperature (Tj) below 150°C and using a suitable heat sink.

  • The maximum allowed voltage spike for IPB029N06N3GE8187ATMA1 is 80V, as specified in the datasheet. Exceeding this voltage may damage the device.

  • Yes, IPB029N06N3GE8187ATMA1 can be used in a parallel configuration to increase current handling, but it is essential to ensure that the devices are properly matched and that the current sharing is balanced to avoid overheating and reduce reliability.

  • The recommended gate resistor value for IPB029N06N3GE8187ATMA1 is between 10Ω to 100Ω, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI) but may increase switching losses.