Part Details for IPB029N06N3GATMA1 by Infineon Technologies AG
Results Overview of IPB029N06N3GATMA1 by Infineon Technologies AG
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IPB029N06N3GATMA1 Information
IPB029N06N3GATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPB029N06N3GATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
97Y1820
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Newark | Mosfet, N-Ch, 60V, 120A, To-263-3, Transistor Polarity:N Channel, Continuous Drain Current Id:120A... more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1032 |
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$1.0500 / $2.6100 | Buy Now |
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DISTI #
IPB029N06N3GATMA1CT-ND
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DigiKey | MOSFET N-CH 60V 120A D2PAK Min Qty: 1 Lead time: 14 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
24614 In Stock |
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$0.8748 / $2.6400 | Buy Now |
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DISTI #
IPB029N06N3GATMA1
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Avnet Americas | Trans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB029N06N3GATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Reel | 0 |
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$0.7199 / $0.7742 | Buy Now |
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DISTI #
726-IPB029N06N3GATMA
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Mouser Electronics | MOSFETs N-Ch 60V 120A D2PAK-2 OptiMOS 3 RoHS: Compliant | 4284 |
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$0.8740 / $2.4100 | Buy Now |
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DISTI #
E02:0323_02045325
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Arrow Electronics | Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks Date Code: 2507 | Europe - 1000 |
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$0.8770 / $0.9389 | Buy Now |
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Future Electronics | Single N-Channel 60 V 2.9 mOhm 124 nC OptiMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks Container: Reel |
0 Reel |
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$0.7700 / $0.8050 | Buy Now |
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Future Electronics | Single N-Channel 60 V 2.9 mOhm 124 nC OptiMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks Container: Reel |
0 Reel |
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$0.7700 / $0.8050 | Buy Now |
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DISTI #
87832300
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Verical | Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2503 | Americas - 5000 |
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$0.9390 | Buy Now |
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DISTI #
69265669
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Verical | Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R Min Qty: 37 Package Multiple: 1 Date Code: 2304 | Americas - 1944 |
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$0.8430 / $1.5400 | Buy Now |
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DISTI #
87806789
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Verical | Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2507 | Americas - 1000 |
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$0.9700 | Buy Now |
Part Details for IPB029N06N3GATMA1
IPB029N06N3GATMA1 CAD Models
IPB029N06N3GATMA1 Part Data Attributes
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IPB029N06N3GATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB029N06N3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
Select a part to compare: |
| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | GREEN, PLASTIC, TO-263, D2PAK-3 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 235 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.0032 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 480 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB029N06N3GATMA1
This table gives cross-reference parts and alternative options found for IPB029N06N3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB029N06N3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPB029N06N3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | IPB029N06N3GATMA1 vs IPB029N06N3G |