Part Details for IPB023N04NF2S by Infineon Technologies AG
Overview of IPB023N04NF2S by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IPB023N04NF2S
| Part # | Distributor | Description | Stock | Price | Buy | |
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CHIPMALL.COM LIMITED | TO-263-3 MOSFETs ROHS | 784 |
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$1.0740 / $1.3762 | Buy Now |
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LCSC | TO-263-3 MOSFETs ROHS | 784 |
|
$1.1054 / $1.4254 | Buy Now |
Part Details for IPB023N04NF2S
IPB023N04NF2S CAD Models
IPB023N04NF2S Part Data Attributes
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IPB023N04NF2S
Infineon Technologies AG
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Datasheet
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IPB023N04NF2S
Infineon Technologies AG
Power Field-Effect Transistor, 122A I(D), 40V, 0.00235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TO-263, D2PAK-3/2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 167 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 122 A | |
| Drain-source On Resistance-Max | 0.00235 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 98 pF | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 488 A | |
| Reference Standard | IEC-61249-2-21 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |