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Part Details for IPB019N08N3GATMA1 by Infineon Technologies AG
Overview of IPB019N08N3GATMA1 by Infineon Technologies AG
- Distributor Offerings: (20 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPB019N08N3GATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
60R2644
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Newark | Mosfet, N Channel, 80V, 180A, To-263, Channel Type:N Channel, Drain Source Voltage Vds:80V, Continuous Drain Current Id:180A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.8V Rohs Compliant: Yes |Infineon IPB019N08N3GATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 1665 |
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$3.9200 | Buy Now |
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DISTI #
IPB019N08N3GATMA1CT-ND
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DigiKey | MOSFET N-CH 80V 180A TO263-7 Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
7622 In Stock |
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$3.2583 / $6.1300 | Buy Now |
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DISTI #
IPB019N08N3GATMA1
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Avnet Americas | Trans MOSFET N-CH 80V 180A 7-Pin(6+Tab) TO-263 T/R - Tape and Reel (Alt: IPB019N08N3GATMA1) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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$2.8690 / $3.5066 | Buy Now |
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DISTI #
726-IPB019N08N3GATMA
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Mouser Electronics | MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3 RoHS: Compliant | 0 |
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$3.2500 / $5.3500 | Order Now |
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DISTI #
V72:2272_06377108
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Arrow Electronics | Trans MOSFET N-CH 80V 180A 7-Pin(6+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2236 Container: Cut Strips | Americas - 1348 |
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$2.7710 / $3.4780 | Buy Now |
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DISTI #
E02:0323_00171314
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Arrow Electronics | Trans MOSFET N-CH 80V 180A 7-Pin(6+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks Date Code: 2409 | Europe - 1000 |
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$2.8331 / $2.9055 | Buy Now |
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DISTI #
73928954
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RS | Transistor, OptiMOS 3 Power MOSFET, N-channel, normal level, 80V, 180A, TO263-7 | Infineon IPB019N08N3GATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 2 Weeks, 0 Days Container: Bulk | 10 |
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$4.1600 / $5.5500 | Buy Now |
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Future Electronics | Single N-Channel 80 V 1.9 mOhm 155 nC OptiMOS™ Power Mosfet - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks Container: Reel | 45000Reel |
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$3.1800 | Buy Now |
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Future Electronics | Single N-Channel 80 V 1.9 mOhm 155 nC OptiMOS™ Power Mosfet - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks Container: Reel | 2000Reel |
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$3.1800 | Buy Now |
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DISTI #
69264905
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Verical | Trans MOSFET N-CH 80V 180A 7-Pin(6+Tab) D2PAK T/R Min Qty: 8 Package Multiple: 1 Date Code: 2239 | Americas - 2785 |
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$2.9875 / $4.4625 | Buy Now |
Part Details for IPB019N08N3GATMA1
IPB019N08N3GATMA1 CAD Models
IPB019N08N3GATMA1 Part Data Attributes
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IPB019N08N3GATMA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
IPB019N08N3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 180A I(D), 80V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7 PIN
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-263 | |
| Package Description | SMALL OUTLINE, R-PSSO-G6 | |
| Pin Count | 7 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 1430 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 180 A | |
| Drain-source On Resistance-Max | 0.0019 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G6 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 720 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |