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Power Field-Effect Transistor, 180A I(D), 80V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, D2PAK-7/6
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC9020
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Newark | Mosfet, N-Ch, 80V, 180A, To-263, Transistor Polarity:N Channel, Continuous Drain Current Id:180A, Drain Source Voltage Vds:80V, On Resistance Rds(On):0.0011Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Rohs Compliant: Yes |Infineon IPB015N08N5ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2243 |
|
$3.9600 / $7.1800 | Buy Now |
DISTI #
IPB015N08N5ATMA1CT-ND
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DigiKey | MOSFET N-CH 80V 180A TO263-7 Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
950 In Stock |
|
$3.6904 / $6.9400 | Buy Now |
DISTI #
IPB015N08N5ATMA1
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Avnet Americas | Trans MOSFET N-CH 80V 180A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB015N08N5ATMA1) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks, 0 Days Container: Reel | 1000 |
|
$4.4770 | Buy Now |
DISTI #
726-IPB015N08N5ATMA1
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Mouser Electronics | MOSFET N-Ch 80V 180A D2PAK-2 RoHS: Compliant | 5325 |
|
$3.6900 / $6.8700 | Buy Now |
DISTI #
V72:2272_06378138
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Arrow Electronics | Trans MOSFET N-CH 80V 260A 7-Pin(6+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Date Code: 2347 Container: Cut Strips | Americas - 197 |
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$3.7040 / $6.7900 | Buy Now |
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Future Electronics | IPB015N08N5 Series 80 V 180 A OptiMOS™ 5 Power Transistor - PG-TO-263-7 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks Container: Reel | 0Reel |
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$3.6400 | Buy Now |
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Future Electronics | IPB015N08N5 Series 80 V 180 A OptiMOS™ 5 Power Transistor - PG-TO-263-7 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks Container: Reel | 0Reel |
|
$3.6400 | Buy Now |
DISTI #
71254678
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Verical | Trans MOSFET N-CH 80V 260A 7-Pin(6+Tab) D2PAK T/R Min Qty: 5 Package Multiple: 1 Date Code: 2332 | Americas - 1982 |
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$4.5500 / $7.3125 | Buy Now |
DISTI #
74492962
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Verical | Trans MOSFET N-CH 80V 260A 7-Pin(6+Tab) D2PAK T/R Min Qty: 2 Package Multiple: 1 Date Code: 2347 | Americas - 197 |
|
$3.7040 / $6.7900 | Buy Now |
DISTI #
IPB015N08N5ATMA1
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TME | Transistor: N-MOSFET, unipolar, 80V, 180A, 375W, PG-TO263-7 Min Qty: 1 | 0 |
|
$5.1800 / $6.7200 | RFQ |
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IPB015N08N5ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB015N08N5ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 180A I(D), 80V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, D2PAK-7/6
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G6 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 20 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 1230 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 180 A | |
Drain-source On Resistance-Max | 0.0015 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263 | |
JESD-30 Code | R-PSSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 720 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IPB015N08N5ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB015N08N5ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPB015N08N5 | Power Field-Effect Transistor, 180A I(D), 80V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, D2PAK-7/6 | Infineon Technologies AG | IPB015N08N5ATMA1 vs IPB015N08N5 |