Datasheets
IPB015N08N5ATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 180A I(D), 80V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, D2PAK-7/6

Part Details for IPB015N08N5ATMA1 by Infineon Technologies AG

Overview of IPB015N08N5ATMA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IPB015N08N5ATMA1

Part # Distributor Description Stock Price Buy
DISTI # 13AC9020
Newark Mosfet, N-Ch, 80V, 180A, To-263, Transistor Polarity:N Channel, Continuous Drain Current Id:180A, Drain Source Voltage Vds:80V, On Resistance Rds(On):0.0011Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Rohs Compliant: Yes |Infineon IPB015N08N5ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 2243
  • 1 $7.1800
  • 10 $6.1700
  • 25 $5.6100
  • 50 $5.3800
  • 100 $5.1400
  • 250 $4.3600
  • 500 $4.2000
  • 1,000 $3.9600
$3.9600 / $7.1800 Buy Now
DISTI # IPB015N08N5ATMA1CT-ND
DigiKey MOSFET N-CH 80V 180A TO263-7 Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 950
In Stock
  • 1 $6.9400
  • 10 $5.9510
  • 100 $4.9594
  • 500 $4.3759
  • 1,000 $3.9383
  • 2,000 $3.6904
$3.6904 / $6.9400 Buy Now
DISTI # IPB015N08N5ATMA1
Avnet Americas Trans MOSFET N-CH 80V 180A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB015N08N5ATMA1) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks, 0 Days Container: Reel 1000
  • 1,000 $4.4770
$4.4770 Buy Now
DISTI # 726-IPB015N08N5ATMA1
Mouser Electronics MOSFET N-Ch 80V 180A D2PAK-2 RoHS: Compliant 5325
  • 1 $6.8700
  • 10 $5.8900
  • 25 $5.6000
  • 100 $4.2700
  • 250 $4.2600
  • 500 $4.0100
  • 1,000 $3.7100
  • 2,000 $3.6900
$3.6900 / $6.8700 Buy Now
DISTI # V72:2272_06378138
Arrow Electronics Trans MOSFET N-CH 80V 260A 7-Pin(6+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Date Code: 2347 Container: Cut Strips Americas - 197
  • 1 $6.7900
  • 10 $5.8390
  • 25 $5.4480
  • 100 $3.7040
$3.7040 / $6.7900 Buy Now
Future Electronics IPB015N08N5 Series 80 V 180 A OptiMOS™ 5 Power Transistor - PG-TO-263-7 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks Container: Reel 0
Reel
  • 1,000 $3.6400
$3.6400 Buy Now
Future Electronics IPB015N08N5 Series 80 V 180 A OptiMOS™ 5 Power Transistor - PG-TO-263-7 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks Container: Reel 0
Reel
  • 1,000 $3.6400
$3.6400 Buy Now
DISTI # 71254678
Verical Trans MOSFET N-CH 80V 260A 7-Pin(6+Tab) D2PAK T/R Min Qty: 5 Package Multiple: 1 Date Code: 2332 Americas - 1982
  • 5 $7.3125
  • 10 $5.9375
  • 50 $5.4625
  • 100 $5.2250
  • 200 $5.0000
  • 500 $4.7500
  • 1,000 $4.5500
$4.5500 / $7.3125 Buy Now
DISTI # 74492962
Verical Trans MOSFET N-CH 80V 260A 7-Pin(6+Tab) D2PAK T/R Min Qty: 2 Package Multiple: 1 Date Code: 2347 Americas - 197
  • 2 $6.7900
  • 10 $5.8390
  • 25 $5.4480
  • 100 $3.7040
$3.7040 / $6.7900 Buy Now
DISTI # IPB015N08N5ATMA1
TME Transistor: N-MOSFET, unipolar, 80V, 180A, 375W, PG-TO263-7 Min Qty: 1 0
  • 1 $6.7200
  • 10 $5.1800
$5.1800 / $6.7200 RFQ
Ameya Holding Limited IPB015N08N5 Series 80 V 180 A OptiMOS™ 5 Power Transistor - PG-TO-263-7 2662
RFQ
Chip1Cloud MOSFET N-CH 80V 180A TO263-7 2000
RFQ
DISTI # C1S322000898662
Chip1Stop MOSFET RoHS: Compliant Container: Cut Tape 1982
  • 1 $5.8500
  • 10 $4.7500
  • 50 $4.3700
  • 100 $4.1800
  • 200 $4.0000
  • 500 $3.8000
  • 1,000 $3.6400
$3.6400 / $5.8500 Buy Now
DISTI # SP001226034
EBV Elektronik Trans MOSFET N-CH 80V 180A 7-Pin TO-263 T/R (Alt: SP001226034) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 21 Weeks, 0 Days EBV - 28000
Buy Now

Part Details for IPB015N08N5ATMA1

IPB015N08N5ATMA1 CAD Models

IPB015N08N5ATMA1 Part Data Attributes

IPB015N08N5ATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPB015N08N5ATMA1 Infineon Technologies AG Power Field-Effect Transistor, 180A I(D), 80V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, D2PAK-7/6
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G6
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 1230 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 180 A
Drain-source On Resistance-Max 0.0015 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263
JESD-30 Code R-PSSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 720 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPB015N08N5ATMA1

This table gives cross-reference parts and alternative options found for IPB015N08N5ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB015N08N5ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPB015N08N5 Power Field-Effect Transistor, 180A I(D), 80V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, D2PAK-7/6 Infineon Technologies AG IPB015N08N5ATMA1 vs IPB015N08N5
Part Number Description Manufacturer Compare
BUK6C3R3-75C Power Field-Effect Transistor Nexperia IPB015N08N5ATMA1 vs BUK6C3R3-75C
STH240N75F3-2 N-channel 75 V, 2.6 mOhm typ., 180 A STripFET(TM) III Power MOSFET in H2PAK-2 package STMicroelectronics IPB015N08N5ATMA1 vs STH240N75F3-2
IPB015N08N5 Power Field-Effect Transistor, 180A I(D), 80V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, D2PAK-7/6 Infineon Technologies AG IPB015N08N5ATMA1 vs IPB015N08N5

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