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Part Details for IPB010N06N by Infineon Technologies AG
Overview of IPB010N06N by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPB010N06N
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
726-IPB010N06N
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Mouser Electronics | MOSFET N-Ch 60V 180A D2PAK-6 RoHS: Compliant | 898 |
|
$3.9000 / $7.2600 | Buy Now |
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Bristol Electronics | Min Qty: 1 | 24 |
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$3.3600 / $6.7200 | Buy Now |
|
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Quest Components | 19 |
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$4.5000 / $9.0000 | Buy Now | |
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Ameya Holding Limited | Min Qty: 250 | 98 |
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$7.9573 / $8.2022 | Buy Now |
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DISTI #
TMOSP10832
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Rutronik | N-CH 60V 180A 1mOhm TO263-7 RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Reel |
Stock DE - 1000 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$3.4500 | Buy Now |
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Win Source Electronics | New OptiMOS™ 40V and 60V | 16500 |
|
$5.6530 / $8.4790 | Buy Now |
Part Details for IPB010N06N
IPB010N06N CAD Models
IPB010N06N Part Data Attributes
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IPB010N06N
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB010N06N
Infineon Technologies AG
Power Field-Effect Transistor, 45A I(D), 60V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-7/6
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-263 | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-7/6 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 1600 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 45 A | |
| Drain-source On Resistance-Max | 0.001 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263 | |
| JESD-30 Code | R-PSSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 720 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB010N06N
This table gives cross-reference parts and alternative options found for IPB010N06N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB010N06N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB010N06NATMA1 | Power Field-Effect Transistor, 45A I(D), 60V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-7/6 | Infineon Technologies AG | IPB010N06N vs IPB010N06NATMA1 |