Datasheets
IPAN80R450P7XKSA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN

Part Details for IPAN80R450P7XKSA1 by Infineon Technologies AG

Overview of IPAN80R450P7XKSA1 by Infineon Technologies AG

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Price & Stock for IPAN80R450P7XKSA1

Part # Distributor Description Stock Price Buy
DISTI # 24AC9035
Newark Mosfet, N-Ch, 800V, 11A, To-220Fp, Transistor Polarity:N Channel, Continuous Drain Current Id:11A, Drain Source Voltage Vds:800V, On Resistance Rds(On):0.38Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Rohs Compliant: Yes |Infineon IPAN80R450P7XKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $2.3900
  • 10 $1.6200
  • 100 $1.4500
  • 500 $1.2800
  • 1,000 $1.1700
  • 2,500 $1.1500
  • 5,000 $1.1300
$1.1300 / $2.3900 Buy Now
DISTI # IPAN80R450P7XKSA1-ND
DigiKey MOSFET N-CH 800V 11A TO220-3-31 Min Qty: 1 Lead time: 17 Weeks Container: Tube 372
In Stock
  • 1 $2.1300
  • 50 $1.7092
  • 100 $1.4062
$1.4062 / $2.1300 Buy Now
DISTI # IPAN80R450P7XKSA1
Avnet Americas Transistor MOSFET N-CH 800V 11A 3-Pin TO-220FP Tube - Rail/Tube (Alt: IPAN80R450P7XKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 50 Lead time: 17 Weeks, 0 Days Container: Tube 0
  • 500 $1.2138
  • 600 $1.1781
  • 1,100 $1.1424
  • 2,500 $1.1067
  • 5,000 $1.0710
  • 25,000 $1.0353
  • 50,000 $0.9996
$0.9996 / $1.2138 Buy Now
DISTI # 726-IPAN80R450P7XKSA
Mouser Electronics MOSFET LOW POWER_NEW RoHS: Compliant 1359
  • 1 $1.8900
  • 10 $1.3200
  • 100 $1.1900
  • 500 $0.9950
  • 1,000 $0.9590
  • 5,000 $0.9220
$0.9220 / $1.8900 Buy Now
Future Electronics Single N-Channel 800 V 450 mOhm 24 nC CoolMOS™ Power Mosfet - TO-220-3FP RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 17 Weeks Container: Tube 0
Tube
  • 50 $1.0200
  • 1,000 $0.9950
  • 1,500 $0.9800
  • 2,000 $0.9700
  • 2,500 $0.9400
$0.9400 / $1.0200 Buy Now
Future Electronics Single N-Channel 800 V 450 mOhm 24 nC CoolMOS™ Power Mosfet - TO-220-3FP RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 17 Weeks Container: Tube 0
Tube
  • 50 $1.0200
  • 1,000 $0.9950
  • 1,500 $0.9800
  • 2,000 $0.9700
  • 2,500 $0.9400
$0.9400 / $1.0200 Buy Now
DISTI # 75724000
Verical Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant Min Qty: 21 Package Multiple: 1 Date Code: 2344 Americas - 500
  • 21 $1.5125
  • 50 $1.3125
  • 100 $1.2500
  • 200 $1.2463
  • 500 $1.1513
$1.1513 / $1.5125 Buy Now
Ameya Holding Limited   Min Qty: 50 430
  • 50 $1.6203
  • 100 $1.5717
  • 200 $1.5245
$1.5245 / $1.6203 Buy Now
DISTI # C1S322001060293
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes Container: Tube 500
  • 1 $1.6000
  • 10 $1.2200
  • 50 $1.0500
  • 100 $1.0000
  • 500 $0.9230
$0.9230 / $1.6000 Buy Now
DISTI # SP001632932
EBV Elektronik Transistor MOSFET N-CH 800V 11A 3-Pin TO-220FP Tube (Alt: SP001632932) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 18 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IPAN80R450P7XKSA1

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IPAN80R450P7XKSA1 Part Data Attributes

IPAN80R450P7XKSA1 Infineon Technologies AG
Buy Now Datasheet
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IPAN80R450P7XKSA1 Infineon Technologies AG Power Field-Effect Transistor, 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 17 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 29 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain-source On Resistance-Max 0.45 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 29 A
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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