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Power Field-Effect Transistor, 800V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
93AC7082
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Newark | Mosfet, N-Ch, 800V, 13A, 30W, To-220Fp, Transistor Polarity:N Channel, Continuous Drain Current Id:13A, Drain Source Voltage Vds:800V, On Resistance Rds(On):0.31Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Rohs Compliant: Yes |Infineon IPAN80R360P7XKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$1.3700 / $2.8900 | Buy Now |
DISTI #
IPAN80R360P7XKSA1-ND
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DigiKey | MOSFET N-CH 800V 13A TO220 Min Qty: 1 Lead time: 17 Weeks Container: Tube | Temporarily Out of Stock |
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$1.1231 / $2.5900 | Buy Now |
DISTI #
IPAN80R360P7XKSA1
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Avnet Americas | Transistor MOSFET N-CH 800V 13A 3-Pin TO-220FP Tube - Rail/Tube (Alt: IPAN80R360P7XKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 50 Lead time: 17 Weeks, 0 Days Container: Tube | 0 |
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$1.3465 | Buy Now |
DISTI #
726-IPAN80R360P7XKS
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Mouser Electronics | MOSFET LOW POWER_NEW RoHS: Compliant | 0 |
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$1.1200 / $2.5900 | Order Now |
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Future Electronics | Single N-Channel 800 V 360 mOhm 30 nC CoolMOS™ Power Mosfet - TO-220-3FP RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 17 Weeks Container: Tube | 0Tube |
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$1.1400 / $1.2000 | Buy Now |
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Future Electronics | Single N-Channel 800 V 360 mOhm 30 nC CoolMOS™ Power Mosfet - TO-220-3FP RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 17 Weeks Container: Tube | 0Tube |
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$1.1400 / $1.2000 | Buy Now |
DISTI #
IPAN80R360P7
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TME | Transistor: N-MOSFET, unipolar, 800V, 8.6A, 30W, TO220FP Min Qty: 1 | 0 |
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$1.3900 / $1.9400 | RFQ |
DISTI #
SP001702158
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EBV Elektronik | Transistor MOSFET N-CH 800V 13A 3-Pin TO-220FP Tube (Alt: SP001702158) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 18 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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IPAN80R360P7XKSA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
IPAN80R360P7XKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 800V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | TO-220FP, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 17 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 34 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain-source On Resistance-Max | 0.36 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 34 A | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |