Part Details for IPA70R900P7S by Infineon Technologies AG
Overview of IPA70R900P7S by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IPA70R900P7S
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
79003939
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Verical | Trans MOSFET N-CH 700V 6A 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant Min Qty: 112 Package Multiple: 1 Date Code: 2301 | Americas - 500 |
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$0.6754 / $0.7299 | Buy Now |
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Quest Components | 400 |
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$0.8940 / $2.2350 | Buy Now | |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2023 Date Code: 2023 | 500 |
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$0.4470 / $1.2480 | Buy Now |
Part Details for IPA70R900P7S
IPA70R900P7S CAD Models
IPA70R900P7S Part Data Attributes
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IPA70R900P7S
Infineon Technologies AG
Buy Now
Datasheet
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IPA70R900P7S
Infineon Technologies AG
Power Field-Effect Transistor, 700V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | TO-220FP, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 700 V | |
Drain-source On Resistance-Max | 0.9 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Min | -40 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 12.8 A | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |