Datasheets
IPA65R400CEXKSA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 650V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN

Part Details for IPA65R400CEXKSA1 by Infineon Technologies AG

Overview of IPA65R400CEXKSA1 by Infineon Technologies AG

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Price & Stock for IPA65R400CEXKSA1

Part # Distributor Description Stock Price Buy
DISTI # 12AC9698
Newark Mosfet, N-Ch, 650V, 15.1A, To-220Fp, Transistor Polarity:N Channel, Continuous Drain Current Id:15.1A, Drain Source Voltage Vds:650V, On Resistance Rds(On):0.36Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Rohs Compliant: Yes |Infineon IPA65R400CEXKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 475
  • 1 $1.7400
  • 10 $1.4500
  • 100 $1.1500
  • 500 $1.0100
  • 1,000 $0.7830
  • 2,500 $0.7530
  • 10,000 $0.7220
$0.7220 / $1.7400 Buy Now
DISTI # 448-IPA65R400CEXKSA1-ND
DigiKey MOSFET N-CH 650V TO220 Min Qty: 1 Lead time: 15 Weeks Container: Tube 232
In Stock
  • 1 $1.5700
  • 50 $1.2576
  • 100 $0.9967
  • 500 $0.8448
  • 1,000 $0.6882
  • 2,000 $0.6478
  • 5,000 $0.6170
  • 10,000 $0.5885
$0.5885 / $1.5700 Buy Now
DISTI # IPA65R400CEXKSA1
Avnet Americas Trans MOSFET N-CH 700V 15.1A 3-Pin TO-220FP Tube - Rail/Tube (Alt: IPA65R400CEXKSA1) RoHS: Not Compliant Min Qty: 50 Package Multiple: 1 Lead time: 15 Weeks, 0 Days Container: Tube 400
  • 50 $0.7427
  • 60 $0.7209
  • 110 $0.6990
  • 250 $0.6772
  • 500 $0.6553
  • 2,500 $0.6335
  • 5,000 $0.6117
$0.6117 / $0.7427 Buy Now
DISTI # 726-IPA65R400CEXKSA1
Mouser Electronics MOSFET CONSUMER RoHS: Compliant 703
  • 1 $1.5700
  • 10 $1.1300
  • 100 $0.9200
  • 500 $0.8620
  • 1,000 $0.6470
  • 5,000 $0.6160
  • 10,000 $0.5880
$0.5880 / $1.5700 Buy Now
Future Electronics CoolMOS RoHS: Non Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Tube 0
Tube
  • 3,000 $0.6200
  • 6,000 $0.6000
$0.6000 / $0.6200 Buy Now
Future Electronics CoolMOS RoHS: Non Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Tube 0
Tube
  • 3,000 $0.6200
  • 6,000 $0.6000
$0.6000 / $0.6200 Buy Now
Rochester Electronics CONSUMER RoHS: Compliant Status: Active Min Qty: 1 2136
  • 1 $0.6853
  • 25 $0.6716
  • 100 $0.6442
  • 500 $0.6168
  • 1,000 $0.5825
$0.5825 / $0.6853 Buy Now
Ameya Holding Limited   Min Qty: 50 395
  • 50 $1.4921
  • 100 $1.4472
  • 200 $1.4040
$1.4040 / $1.4921 Buy Now
DISTI # SP001429766
EBV Elektronik Trans MOSFET N-CH 700V 15.1A 3-Pin TO-220FP Tube (Alt: SP001429766) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 16 Weeks, 0 Days EBV - 2000
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 500 1500
  • 500 $1.8800
  • 1,500 $1.7500
$1.7500 / $1.8800 Buy Now

Part Details for IPA65R400CEXKSA1

IPA65R400CEXKSA1 CAD Models

IPA65R400CEXKSA1 Part Data Attributes:

IPA65R400CEXKSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPA65R400CEXKSA1 Infineon Technologies AG Power Field-Effect Transistor, 650V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 15 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 215 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain-source On Resistance-Max 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 30 A
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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