Part Details for IPA65R099C6XKSA1 by Infineon Technologies AG
Overview of IPA65R099C6XKSA1 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IPA65R099C6XKSA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPA65R099C6XKSA1
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Avnet Americas | Trans MOSFET N-CH 700V 38A 3-Pin TO-220FP Tube - Rail/Tube (Alt: IPA65R099C6XKSA1) RoHS: Compliant Min Qty: 112 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 450 Partner Stock |
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$2.7900 / $3.2800 | Buy Now |
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Rochester Electronics | IPA65R099 - 650V and 700V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 450 |
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$2.7900 / $3.2800 | Buy Now |
DISTI #
SP000895220
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EBV Elektronik | Trans MOSFET N-CH 700V 38A 3-Pin TO-220FP Tube (Alt: SP000895220) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 41 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IPA65R099C6XKSA1
IPA65R099C6XKSA1 CAD Models
IPA65R099C6XKSA1 Part Data Attributes
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IPA65R099C6XKSA1
Infineon Technologies AG
Buy Now
Datasheet
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IPA65R099C6XKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 650V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULL PACK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-220AB | |
Package Description | GREEN, PLASTIC, TO-220, FULL PACK-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Avalanche Energy Rating (Eas) | 845 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain-source On Resistance-Max | 0.099 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 115 A | |
Surface Mount | NO | |
Terminal Finish | TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |