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Transistors / Power Field-Effect Transistors / IPA60R380P6XKSA1
Datasheets
IPA60R380P6XKSA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN

Part Details for IPA60R380P6XKSA1 by Infineon Technologies AG

Overview of IPA60R380P6XKSA1 by Infineon Technologies AG

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Price & Stock for IPA60R380P6XKSA1

Part # Distributor Description Stock Price Buy
DISTI # 54X5222
Newark Mosfet Transistor, N Channel, 10.6 A, 600 V, 0.342 Ohm, 10 V, 4 V Rohs Compliant: Yes |Infineon IPA60R380P6XKSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $2.0400
  • 10 $1.7000
  • 100 $1.3500
  • 500 $1.1300
  • 1,000 $0.9710
  • 2,500 $0.9240
  • 5,000 $0.8880
$0.8880 / $2.0400 Buy Now
DISTI # IPA60R380P6XKSA1-ND
DigiKey MOSFET N-CH 600V 10.6A TO220-FP Min Qty: 1 Lead time: 15 Weeks Container: Tube 439
In Stock
  • 1 $2.4600
  • 50 $1.2072
  • 100 $1.0851
  • 500 $0.8711
  • 1,000 $0.8023
  • 2,000 $0.7445
  • 5,000 $0.7286
$0.7286 / $2.4600 Buy Now
DISTI # IPA60R380P6XKSA1
Avnet Americas Trans MOSFET N-CH 600(Min)V 6.5A 3-Pin TO-220 FP Tube - Rail/Tube (Alt: IPA60R380P6XKSA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 500 Lead time: 15 Weeks, 0 Days Container: Tube 0
RFQ
DISTI # 726-IPA60R380P6XKSA1
Mouser Electronics MOSFETs N-Ch 600V 6.5A TO220FP-3 RoHS: Compliant 0
  • 500 $0.7980
  • 1,000 $0.7280
$0.7280 / $0.7980 Order Now
DISTI # E02:0323_07054876
Arrow Electronics Trans MOSFET N-CH 600V 10.6A 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant Min Qty: 500 Package Multiple: 50 Lead time: 15 Weeks Date Code: 2425 Europe - 1000
  • 500 $1.0642
  • 1,000 $0.9913
  • 2,500 $0.9496
  • 3,000 $0.9335
  • 5,000 $0.9000
  • 10,000 $0.8678
$0.8678 / $1.0642 Buy Now
Future Electronics Single N-Channel 600 V 380 mOhm 19 nC CoolMOS™ Power Mosfet - TO-220-3FP RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 15 Weeks Container: Tube 0
Tube
  • 50 $0.7850
  • 1,000 $0.7700
  • 2,000 $0.7550
  • 2,500 $0.7450
  • 7,500 $0.7150
$0.7150 / $0.7850 Buy Now
Future Electronics Single N-Channel 600 V 380 mOhm 19 nC CoolMOS™ Power Mosfet - TO-220-3FP RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 15 Weeks Container: Tube 0
Tube
  • 50 $0.7850
  • 1,000 $0.7700
  • 2,000 $0.7550
  • 2,500 $0.7450
  • 7,500 $0.7150
$0.7150 / $0.7850 Buy Now
DISTI # 84990073
Verical Trans MOSFET N-CH 600V 10.6A 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant Min Qty: 500 Package Multiple: 500 Date Code: 2425 Americas - 1000
  • 500 $1.0768
  • 1,000 $1.0030
  • 2,500 $0.9608
  • 3,000 $0.9445
  • 5,000 $0.9106
  • 10,000 $0.8781
$0.8781 / $1.0768 Buy Now
Rochester Electronics IPA60R380 - 600V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 313
  • 1 $0.8096
  • 25 $0.7934
  • 100 $0.7610
  • 500 $0.7286
  • 1,000 $0.6882
$0.6882 / $0.8096 Buy Now
DISTI # IPA60R380P6XKSA1
TME Transistor: N-MOSFET, unipolar, 600V, 10.6A, 31W, TO220FP Min Qty: 1 0
  • 1 $1.8500
  • 10 $1.5900
  • 50 $1.3600
  • 100 $1.2500
  • 500 $1.0000
  • 1,000 $0.8900
$0.8900 / $1.8500 RFQ
DISTI # SP001017072
EBV Elektronik Trans MOSFET N-CH 600(Min)V 6.5A 3-Pin TO-220 FP Tube (Alt: SP001017072) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 16 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IPA60R380P6XKSA1

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IPA60R380P6XKSA1 Part Data Attributes

Parametric Data
IPA60R380P6XKSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPA60R380P6XKSA1 Infineon Technologies AG Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TO-220FP, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 15 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 210 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 10.6 A
Drain-source On Resistance-Max 0.38 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 31 W
Pulsed Drain Current-Max (IDM) 29 A
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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