Part Details for IPA60R280C6XKSA1 by Infineon Technologies AG
Overview of IPA60R280C6XKSA1 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IPA60R280C6XKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
30T1824
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Newark | Mosfet, n Ch,600V,13.8A, to220-Fp, Transistor Polarity:N Channel, Continuous Drain Current Id:13.8A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.25Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Rohs Compliant: Yes |Infineon IPA60R280C6XKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$1.7100 / $3.5400 | Buy Now |
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Rochester Electronics | IPA60R280C6 - 600V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 572 |
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$1.1600 / $1.3600 | Buy Now |
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LCSC | 600V 13.8A 32W 280m6.5A10V 3.5V430uA 1PCSNChannel TO-220FP-3 MOSFETs ROHS | 96 |
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$1.7174 / $2.8857 | Buy Now |
Part Details for IPA60R280C6XKSA1
IPA60R280C6XKSA1 CAD Models
IPA60R280C6XKSA1 Part Data Attributes:
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IPA60R280C6XKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPA60R280C6XKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 13.8A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULL PACK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-220AB | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 284 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 13.8 A | |
| Drain-source On Resistance-Max | 0.28 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPA60R280C6XKSA1
This table gives cross-reference parts and alternative options found for IPA60R280C6XKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPA60R280C6XKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SIHF15N60E-GE3 | Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, FULLPAK-3 | Vishay Intertechnologies | IPA60R280C6XKSA1 vs SIHF15N60E-GE3 |