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Transistors / Power Field-Effect Transistors / IPA50R350CP
Datasheets
IPA50R350CP by: Infineon Technologies AG

Power Field-Effect Transistor, 10A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Details for IPA50R350CP by Infineon Technologies AG

Results Overview of IPA50R350CP by Infineon Technologies AG

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IPA50R350CP Information

IPA50R350CP by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for IPA50R350CP

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IPA50R350CP Part Data Attributes

Parametric Data
IPA50R350CP Infineon Technologies AG
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IPA50R350CP Infineon Technologies AG Power Field-Effect Transistor, 10A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description TO-220, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 246 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.35 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 32 W
Pulsed Drain Current-Max (IDM) 22 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPA50R350CP

This table gives cross-reference parts and alternative options found for IPA50R350CP. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPA50R350CP, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IPP50R399CP Infineon Technologies AG Check for Price Power Field-Effect Transistor, 9A I(D), 500V, 0.399ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN IPA50R350CP vs IPP50R399CP
IPP50R350CP Infineon Technologies AG Check for Price Power Field-Effect Transistor, 10A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN IPA50R350CP vs IPP50R350CP
IPA50R350CPXKSA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 10A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULL PACK-3 IPA50R350CP vs IPA50R350CPXKSA1

IPA50R350CP Related Parts

IPA50R350CP Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IPA50R350CP is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -20°C to 125°C for optimal performance and reliability.

  • To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material (TIM) between the device and the heat sink. The heat sink should be designed to dissipate the maximum power dissipation of the device, which is 350W. Additionally, ensure good airflow around the heat sink to prevent overheating.

  • For optimal performance and reliability, it's recommended to follow Infineon's guidelines for PCB layout and design. This includes using a multi-layer PCB with a solid ground plane, placing decoupling capacitors close to the device, and minimizing the length of the power traces. Additionally, ensure that the PCB is designed to handle the high currents and voltages associated with the IPA50R350CP.

  • To protect the IPA50R350CP from overvoltage and overcurrent conditions, it's recommended to use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) circuit. These circuits should be designed to detect and respond to fault conditions quickly, and should be able to handle the maximum voltage and current ratings of the device.

  • The recommended gate drive circuits and components for the IPA50R350CP depend on the specific application and requirements. However, in general, it's recommended to use a gate driver IC with a high current capability and a low output impedance. Additionally, use a suitable gate resistor and capacitor to ensure proper gate drive and to prevent oscillations.