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Transistors / Power Field-Effect Transistors / IPA057N08N3GXKSA1
Datasheets
IPA057N08N3GXKSA1 by:

Power Field-Effect Transistor, 60A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN

Part Details for IPA057N08N3GXKSA1 by Infineon Technologies AG

Overview of IPA057N08N3GXKSA1 by Infineon Technologies AG

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Applications Industrial Automation Energy and Power Systems Renewable Energy Electronic Manufacturing

Price & Stock for IPA057N08N3GXKSA1

Part # Distributor Description Stock Price Buy
DISTI # 34AC1645
Newark Mosfet, N-Ch, 80V, 60A, To-220Fp, Transistor Polarity:N Channel, Continuous Drain Current Id:60A, Drain Source Voltage Vds:80V, On Resistance Rds(On):0.0049Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.8V, Power Rohs Compliant: Yes |Infineon IPA057N08N3GXKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $3.1000
  • 10 $2.8000
  • 100 $2.2900
  • 500 $1.9100
  • 1,000 $1.6100
  • 2,500 $1.5200
  • 5,000 $1.4700
$1.4700 / $3.1000 Buy Now
DISTI # 448-IPA057N08N3GXKSA1-ND
DigiKey MOSFET N-CH 80V 60A TO220-FP Min Qty: 1 Lead time: 20 Weeks Container: Tube 440
In Stock
  • 1 $2.4700
  • 50 $1.9820
  • 100 $1.6307
  • 500 $1.3799
  • 1,000 $1.1708
  • 2,000 $1.1122
  • 5,000 $1.0704
$1.0704 / $2.4700 Buy Now
DISTI # IPA057N08N3GXKSA1
Avnet Americas Trans MOSFET N-CH 80V 60A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: IPA057N08N3GXKSA1) RoHS: Not Compliant Min Qty: 500 Package Multiple: 50 Lead time: 18 Weeks, 0 Days Container: Tube 0
  • 500 $1.1730
  • 600 $1.1385
  • 1,100 $1.1040
  • 2,500 $1.0695
  • 5,000 $1.0350
  • 25,000 $1.0005
  • 50,000 $0.9660
$0.9660 / $1.1730 Buy Now
Future Electronics Single N-Channel 80 V 5.7 mOhm 52 nC OptiMOS™ Power Mosfet - TO-220-3FP RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $1.1500
  • 1,000 $1.1300
  • 1,500 $1.1200
  • 2,000 $1.1200
  • 2,500 $1.1000
$1.1000 / $1.1500 Buy Now
Future Electronics Single N-Channel 80 V 5.7 mOhm 52 nC OptiMOS™ Power Mosfet - TO-220-3FP RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $1.1500
  • 1,000 $1.1300
  • 1,500 $1.1200
  • 2,000 $1.1200
  • 2,500 $1.1000
$1.1000 / $1.1500 Buy Now
Rochester Electronics IPA057N08 - N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 30
  • 1 $1.2100
  • 25 $1.1800
  • 100 $1.1400
  • 500 $1.0900
  • 1,000 $1.0300
$1.0300 / $1.2100 Buy Now
DISTI # IPA057N08N3GXKSA1
Avnet Americas Trans MOSFET N-CH 80V 60A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: IPA057N08N3GXKSA1) RoHS: Not Compliant Min Qty: 500 Package Multiple: 50 Lead time: 18 Weeks, 0 Days Container: Tube 0
  • 500 $1.1730
  • 600 $1.1385
  • 1,100 $1.1040
  • 2,500 $1.0695
  • 5,000 $1.0350
  • 25,000 $1.0005
  • 50,000 $0.9660
$0.9660 / $1.1730 Buy Now
DISTI # IPA057N08N3GXKSA1
TME Transistor: N-MOSFET, unipolar, 80V, 60A, 39W, TO220FP Min Qty: 1 0
  • 1 $1.4000
  • 3 $1.2700
  • 10 $1.1200
  • 50 $0.9700
  • 250 $0.9100
$0.9100 / $1.4000 RFQ
Ameya Holding Limited Transistor: N-MOSFET, unipolar, 80V, 60A, 39W, TO220FP 4646
RFQ
DISTI # SP000454442
EBV Elektronik Power MOSFET, N Channel, 80 V, 60 A, 0.0049 ohm, TO-220FP, Through Hole (Alt: SP000454442) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 19 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IPA057N08N3GXKSA1

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IPA057N08N3GXKSA1 Part Data Attributes:

Parametric Data
IPA057N08N3GXKSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPA057N08N3GXKSA1 Infineon Technologies AG Power Field-Effect Transistor, 60A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 290 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 60 A
Drain-source On Resistance-Max 0.0057 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 240 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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