IMB11A
ROHM Semiconductor
Description: Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon,

Overview of IMB11A by ROHM Semiconductor

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

CAD Models for IMB11A by ROHM Semiconductor
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Part Data Attributes for IMB11A by ROHM Semiconductor

IMB11A
ROHM Semiconductor
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
ROHM CO LTD
Package Description
SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
ROHM Semiconductor
Additional Feature
DIGITAL, BUILT IN BIAS RESISTOR
Collector Current-Max (IC)
0.05 A
Collector-Emitter Voltage-Max
50 V
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
30
JESD-30 Code
R-PDSO-G6
JESD-609 Code
e1
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
PNP
Power Dissipation-Max (Abs)
0.3 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
10
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IMB11A
    ROHM Semiconductor
    Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon,
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