Part Details for IMB10A by ROHM Semiconductor
Overview of IMB10A by ROHM Semiconductor
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Applications
Internet of Things (IoT)
Environmental Monitoring
Space Technology
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Energy and Power Systems
Agriculture Technology
Medical Imaging
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Aerospace and Defense
Healthcare
Entertainment and Gaming
Robotics and Drones
Part Details for IMB10A
IMB10A CAD Models
IMB10A Part Data Attributes:
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IMB10A
ROHM Semiconductor
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Datasheet
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IMB10A
ROHM Semiconductor
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon,
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | SMALL OUTLINE, R-PDSO-G6 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Additional Feature | DIGITAL, BUILT IN BIAS RESISTOR | |
Collector Current-Max (IC) | 0.1 A | |
Collector-Emitter Voltage-Max | 50 V | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | |
DC Current Gain-Min (hFE) | 80 | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | PNP | |
Power Dissipation-Max (Abs) | 0.3 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |