Datasheets
ILB03N60 by:
Infineon Technologies AG
Infineon Technologies AG
Rochester Electronics LLC
Not Found

Insulated Gate Bipolar Transistor, 4.5A I(C), 600V V(BR)CES, N-Channel, TO-263AB, PLASTIC, TO-263, D2PAK-3

Part Details for ILB03N60 by Infineon Technologies AG

Results Overview of ILB03N60 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

ILB03N60 Information

ILB03N60 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for ILB03N60

Part # Distributor Description Stock Price Buy
Rochester Electronics ILB03N60 - Insulated Gate Bipolar Transistor, 4.5A, 600V, N-Channel ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 1000
  • 1 $0.2500
  • 25 $0.2450
  • 100 $0.2350
  • 500 $0.2250
  • 1,000 $0.2125
$0.2125 / $0.2500 Buy Now

Part Details for ILB03N60

ILB03N60 CAD Models

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ILB03N60 Part Data Attributes

ILB03N60 Infineon Technologies AG
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ILB03N60 Infineon Technologies AG Insulated Gate Bipolar Transistor, 4.5A I(C), 600V V(BR)CES, N-Channel, TO-263AB, PLASTIC, TO-263, D2PAK-3
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Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code D2PAK
Package Description PLASTIC, TO-263, D2PAK-3
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 4 Weeks
Additional Feature AVALANCHE RATED
Case Connection COLLECTOR
Collector Current-Max (IC) 4.5 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 3.9 V
Gate-Emitter Voltage-Max 30 V
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 27 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 240 ns
Turn-on Time-Nom (ton) 65 ns

Alternate Parts for ILB03N60

This table gives cross-reference parts and alternative options found for ILB03N60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ILB03N60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
ILA03N60 Infineon Technologies AG Check for Price Insulated Gate Bipolar Transistor, 3A I(C), 600V V(BR)CES, N-Channel, TO-220AB, ROHS COMPLIANT, TO-220, FULL PACK-3 ILB03N60 vs ILA03N60

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