Transistors
ILB03N60
Description: Insulated Gate Bipolar Transistor, 4.5A I(C), 600V V(BR)CES, N-Channel, TO-263AB, PLASTIC, TO-263, D2PAK-3

Overview of ILB03N60 by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 2 listings )
  • Number of FFF Equivalents: ( 0 crosses )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 crosses )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for ILB03N60 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # ILB03N60
Avnet Americas - Rail/Tube (Alt: ILB03N60) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube 1000 Partner Stock
RFQ
Rochester Electronics ILB03N60 - Insulated Gate Bipolar Transistor, 4.5A, 600V, N-Channel ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 1000
  • 1 $0.2625
  • 25 $0.2573
  • 100 $0.2468
  • 500 $0.2363
  • 1,000 $0.2231
$0.2231 / $0.2625 Buy Now

CAD Models for ILB03N60 by Infineon Technologies AG
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Part Data Attributes for ILB03N60 by Infineon Technologies AG

ILB03N60
Infineon Technologies AG
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Part Package Code
D2PAK
Package Description
PLASTIC, TO-263, D2PAK-3
Pin Count
4
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Factory Lead Time
4 Weeks
Additional Feature
AVALANCHE RATED
Case Connection
COLLECTOR
Collector Current-Max (IC)
4.5 A
Collector-Emitter Voltage-Max
600 V
Configuration
SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max
3.9 V
Gate-Emitter Voltage-Max
30 V
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
27 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
240 ns
Turn-on Time-Nom (ton)
65 ns
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  1. ILB03N60
    Infineon Technologies AG
    Insulated Gate Bipolar Transistor, 4.5A I(C), 600V V(BR)CES, N-Channel, TO-263AB, PLASTIC, TO-263, D2PAK-3
    VS

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