Part Details for ILB03N60 by Infineon Technologies AG
Results Overview of ILB03N60 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
ILB03N60 Information
ILB03N60 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for ILB03N60
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Rochester Electronics | ILB03N60 - Insulated Gate Bipolar Transistor, 4.5A, 600V, N-Channel ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 1000 |
|
$0.2125 / $0.2500 | Buy Now |
Part Details for ILB03N60
ILB03N60 CAD Models
ILB03N60 Part Data Attributes
|
ILB03N60
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
ILB03N60
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 4.5A I(C), 600V V(BR)CES, N-Channel, TO-263AB, PLASTIC, TO-263, D2PAK-3
Select a part to compare: |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | D2PAK | |
Package Description | PLASTIC, TO-263, D2PAK-3 | |
Pin Count | 4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Additional Feature | AVALANCHE RATED | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 4.5 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 3.9 V | |
Gate-Emitter Voltage-Max | 30 V | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 27 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 240 ns | |
Turn-on Time-Nom (ton) | 65 ns |
Alternate Parts for ILB03N60
This table gives cross-reference parts and alternative options found for ILB03N60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ILB03N60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
ILA03N60 | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 3A I(C), 600V V(BR)CES, N-Channel, TO-220AB, ROHS COMPLIANT, TO-220, FULL PACK-3 | ILB03N60 vs ILA03N60 |