Transistors
ILA03N60
Infineon Technologies AG
Description: Insulated Gate Bipolar Transistor, 3A I(C), 600V V(BR)CES, N-Channel, TO-220AB, ROHS COMPLIANT, TO-220, FULL PACK-3

Overview of ILA03N60 by Infineon Technologies AG

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  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

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Part Data Attributes for ILA03N60 by Infineon Technologies AG

ILA03N60
Infineon Technologies AG
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Part Package Code
TO-220AB
Package Description
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
Reach Compliance Code
unknown
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Case Connection
ISOLATED
Collector Current-Max (IC)
3 A
Collector-Emitter Voltage-Max
600 V
Configuration
SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max
3.9 V
Gate-Emitter Voltage-Max
30 V
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Number of Terminals
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
16.5 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
240 ns
Turn-on Time-Nom (ton)
65 ns
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  1. ILA03N60
    Infineon Technologies AG
    Insulated Gate Bipolar Transistor, 3A I(C), 600V V(BR)CES, N-Channel, TO-220AB, ROHS COMPLIANT, TO-220, FULL PACK-3
    VS

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