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Transistors / IGBTs / IKW08T120FKSA1
Datasheets
IKW08T120FKSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN

Part Details for IKW08T120FKSA1 by Infineon Technologies AG

Overview of IKW08T120FKSA1 by Infineon Technologies AG

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Applications Industrial Automation Motor control systems

Price & Stock for IKW08T120FKSA1

Part # Distributor Description Stock Price Buy
DISTI # 61M6730
Newark Igbt, N, 1200V, 8A, To-247, Continuous Collector Current:16A, Collector Emitter Saturation Voltage:2.2V, Power Dissipation:70W, Collector Emitter Voltage Max:1.2Kv, No. Of Pins:3Pins, Operating Temperature Max:150°C, Product Range:- Rohs Compliant: Yes |Infineon IKW08T120FKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # IKW08T120FKSA1-ND
DigiKey IGBT NPT FS 1200V 16A TO247-3 Min Qty: 240 Lead time: 19 Weeks Container: Tube 193
In Stock
  • 240 $2.2139
$2.2139 Buy Now
DISTI # IKW08T120FKSA1
Avnet Americas Trans IGBT Chip N-CH 1.2KV 16A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IKW08T120FKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Container: Tube 0
  • 240 $1.8268
  • 300 $1.7731
  • 540 $1.7194
  • 1,200 $1.6656
  • 2,400 $1.6119
  • 12,000 $1.5582
  • 24,000 $1.5044
$1.5044 / $1.8268 Buy Now
DISTI # 726-IKW08T120FKSA1
Mouser Electronics IGBT Transistors LOW LOSS DuoPack 1200V 8A RoHS: Compliant 211
  • 1 $3.4500
  • 10 $3.2800
  • 25 $3.0300
  • 240 $2.2100
$2.2100 / $3.4500 Buy Now
Future Electronics IGBT 1200V 16A TO247-3 RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $2.3200
  • 480 $2.2800
  • 960 $2.2500
  • 1,200 $2.2400
  • 3,600 $2.1700
$2.1700 / $2.3200 Buy Now
DISTI # IKW08T120
TME Transistor: IGBT, 1.2kV, 8A, 70W, TO247-3 Min Qty: 1 57
  • 1 $3.1500
  • 3 $2.7900
  • 10 $2.5000
  • 30 $2.3400
$2.3400 / $3.1500 Buy Now
Ameya Holding Limited Transistor: IGBT, 1.2kV, 8A, 70W, TO247-3 2932
RFQ
DISTI # SP000013885
EBV Elektronik IGBT, General Purpose, 16 A, 2.2 V, 70 W, 1.2 kV, TO-247, 3 Pins (Alt: SP000013885) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 23 Weeks, 0 Days EBV - 0
Buy Now
Win Source Electronics IGBT 1200V 16A TO247-3 80000
  • 22 $2.2900
  • 54 $1.8790
  • 83 $1.8200
  • 114 $1.7610
  • 147 $1.7030
  • 197 $1.5270
$1.5270 / $2.2900 Buy Now

Part Details for IKW08T120FKSA1

IKW08T120FKSA1 Part Data Attributes:

Parametric Data
IKW08T120FKSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IKW08T120FKSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-247AC
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection COLLECTOR
Collector Current-Max (IC) 16 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 710 ns
Turn-on Time-Nom (ton) 66 ns

Alternate Parts for IKW08T120FKSA1

This table gives cross-reference parts and alternative options found for IKW08T120FKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IKW08T120FKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SGP5N60RUFD Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN Samsung Semiconductor IKW08T120FKSA1 vs SGP5N60RUFD
GT25Q101 TRANSISTOR 25 A, 1200 V, N-CHANNEL IGBT, TO-3PL, TO-3PL, 3 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components IKW08T120FKSA1 vs GT25Q101
HGT1S12N60B3S9A Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB, Fairchild Semiconductor Corporation IKW08T120FKSA1 vs HGT1S12N60B3S9A
HGTP20N60C3R Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB Harris Semiconductor IKW08T120FKSA1 vs HGTP20N60C3R
IRG4BC20FD-STRL Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 International Rectifier IKW08T120FKSA1 vs IRG4BC20FD-STRL
IXGH36N60A3D4 Insulated Gate Bipolar Transistor, Littelfuse Inc IKW08T120FKSA1 vs IXGH36N60A3D4
IRGPS40B120U Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-274AA, SUPER-247, 3 PIN Infineon Technologies AG IKW08T120FKSA1 vs IRGPS40B120U
SGP5N60RUF Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN Samsung Semiconductor IKW08T120FKSA1 vs SGP5N60RUF
IRG4PC40UD Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN Infineon Technologies AG IKW08T120FKSA1 vs IRG4PC40UD
IXSH10N120A Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation IKW08T120FKSA1 vs IXSH10N120A

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