Datasheets
IKD15N60RFAATMA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-252,

Part Details for IKD15N60RFAATMA1 by Infineon Technologies AG

Overview of IKD15N60RFAATMA1 by Infineon Technologies AG

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for IKD15N60RFAATMA1

Part # Distributor Description Stock Price Buy
DISTI # IKD15N60RFAATMA1-ND
DigiKey IGBT 600V 30A 250W PG-TO252-3 Min Qty: 2500 Lead time: 19 Weeks Container: Tape & Reel (TR) Limited Supply - Call
  • 2,500 $1.1512
  • 5,000 $1.1079
$1.1079 / $1.1512 Buy Now
DISTI # IKD15N60RFAATMA1
Avnet Americas Trans IGBT Chip N-CH 600V 30A 3-Pin TO-252 T/R - Tape and Reel (Alt: IKD15N60RFAATMA1) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
RFQ

Part Details for IKD15N60RFAATMA1

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IKD15N60RFAATMA1 Part Data Attributes

IKD15N60RFAATMA1 Infineon Technologies AG
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IKD15N60RFAATMA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-252,
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection COLLECTOR
Collector Current-Max (IC) 30 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Reference Standard AEC-Q101
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 193 ns
Turn-on Time-Nom (ton) 30 ns

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