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Part Details for IKB40N65EH5ATMA1 by Infineon Technologies AG
Overview of IKB40N65EH5ATMA1 by Infineon Technologies AG
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Price & Stock for IKB40N65EH5ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
62AC6980
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Newark | Igbt, 650V, 74A, To-236, Continuous Collector Current:74A, Collector Emitter Saturation Voltage:1.65V, Power Dissipation:250W, Collector Emitter Voltage Max:650V, No. Of Pins:3Pins, Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon IKB40N65EH5ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 2 |
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$0.8260 | Buy Now |
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DISTI #
IKB40N65EH5ATMA1CT-ND
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DigiKey | IGBT TRENCH FS 650V 74A TO263-3 Min Qty: 1 Lead time: 19 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1362 In Stock |
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$2.1108 / $4.3400 | Buy Now |
|
DISTI #
IKB40N65EH5ATMA1
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Avnet Americas | Trans IGBT Chip N-CH 650V 74A 3-Pin TO-263 T/R - Tape and Reel (Alt: IKB40N65EH5ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 19 Weeks, 0 Days Container: Reel | 0 |
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$2.5112 | Buy Now |
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DISTI #
62AC6980
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Avnet Americas | Trans IGBT Chip N-CH 650V 74A 3-Pin TO-263 T/R - Product that comes on tape, but is not reeled (Alt: 62AC6980) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks, 0 Days Container: Ammo Pack | 2 Partner Stock |
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$3.5800 / $5.0700 | Buy Now |
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DISTI #
726-IKB40N65EH5ATMA1
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Mouser Electronics | IGBT Transistors INDUSTRY 14 RoHS: Compliant | 990 |
|
$2.1100 / $4.3400 | Buy Now |
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DISTI #
80939918
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Verical | Trans IGBT Chip N-CH 650V 74A 250W 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2309 | Americas - 13000 |
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$2.6083 | Buy Now |
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DISTI #
71239708
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Verical | Trans IGBT Chip N-CH 650V 74A 250W 3-Pin(2+Tab) D2PAK T/R Min Qty: 7 Package Multiple: 1 Date Code: 2314 | Americas - 990 |
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$3.5125 / $4.7375 | Buy Now |
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DISTI #
IKB40N65EH5ATMA1
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TME | Transistor: IGBT, 650V, 46A, 125W, D2PAK Min Qty: 1 | 0 |
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$2.9400 / $4.1100 | RFQ |
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DISTI #
C1S322001039035
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Chip1Stop | IGBT discrete RoHS: Compliant Container: Cut Tape | 990 |
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$2.8100 / $3.7900 | Buy Now |
|
DISTI #
SP001502650
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EBV Elektronik | Trans IGBT Chip N-CH 650V 74A 3-Pin TO-263 T/R (Alt: SP001502650) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 23 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IKB40N65EH5ATMA1
IKB40N65EH5ATMA1 CAD Models
IKB40N65EH5ATMA1 Part Data Attributes
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IKB40N65EH5ATMA1
Infineon Technologies AG
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Datasheet
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IKB40N65EH5ATMA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 74 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 4.8 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 250 W | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 205 ns | |
| Turn-on Time-Nom (ton) | 48 ns | |
| VCEsat-Max | 2.1 V |