Part Details for IKB10N60T by Infineon Technologies AG
Overview of IKB10N60T by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IKB10N60T
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
726-IKB10N60T
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Mouser Electronics | IGBTs LOW LOSS DuoPack 600V 10A RoHS: Compliant | 1097 |
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$0.7640 / $1.8100 | Buy Now |
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Quest Components | 125212 |
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$1.2435 / $3.3160 | Buy Now | |
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LCSC | TO-263-3 IGBT Transistors / Modules ROHS | 1000 |
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$1.0462 / $1.7007 | Buy Now |
Part Details for IKB10N60T
IKB10N60T CAD Models
IKB10N60T Part Data Attributes
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IKB10N60T
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IKB10N60T
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | GREEN, PLASTIC, TO-263, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 20 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 5.7 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 110 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 296 ns | |
| Turn-on Time-Nom (ton) | 21 ns |
Alternate Parts for IKB10N60T
This table gives cross-reference parts and alternative options found for IKB10N60T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IKB10N60T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRGS6B60KDPBF | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IKB10N60T vs IRGS6B60KDPBF |
| IRGS10B60KDTRR | Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | International Rectifier | IKB10N60T vs IRGS10B60KDTRR |
| IRGS6B60KDTRR | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | International Rectifier | IKB10N60T vs IRGS6B60KDTRR |
| IRGS4B60K | Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | Infineon Technologies AG | IKB10N60T vs IRGS4B60K |
| IKB10N60TATMA1 | Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IKB10N60T vs IKB10N60TATMA1 |
| IRGS6B60KD | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | Infineon Technologies AG | IKB10N60T vs IRGS6B60KD |
| IRGS4B60KPBF | Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IKB10N60T vs IRGS4B60KPBF |
| IRGS6B60KDPBF | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IKB10N60T vs IRGS6B60KDPBF |
| IRGS6B60KDTRLPBF | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IKB10N60T vs IRGS6B60KDTRLPBF |
| IRGS4B60KD1 | Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | Infineon Technologies AG | IKB10N60T vs IRGS4B60KD1 |