Datasheets
IHW30N160R5XKSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 60A I(C), 1600V V(BR)CES, N-Channel, TO-247,

Part Details for IHW30N160R5XKSA1 by Infineon Technologies AG

Results Overview of IHW30N160R5XKSA1 by Infineon Technologies AG

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Applications Industrial Automation Electronic Manufacturing

IHW30N160R5XKSA1 Information

IHW30N160R5XKSA1 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IHW30N160R5XKSA1

Part # Distributor Description Stock Price Buy
DISTI # 99AC0314
Newark Igbt, 1.6Kv, 60A, 175Deg C, 263W, Continuous Collector Current:60A, Collector Emitter Saturation V... oltage:1.85V, Power Dissipation:263W, Collector Emitter Voltage Max:1.6Kv, No. Of Pins:3Pins, Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon IHW30N160R5XKSA1 more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 12284
  • 1 $6.2000
  • 10 $6.0500
  • 25 $3.9500
  • 50 $3.7200
  • 100 $3.4800
  • 480 $3.4700
  • 720 $3.1000
$3.1000 / $6.2000 Buy Now
DISTI # 448-IHW30N160R5XKSA1-ND
DigiKey IGBT 1600V 60A TO247-3 Min Qty: 1 Lead time: 19 Weeks Container: Tube 6365
In Stock
  • 1 $5.4600
  • 30 $3.0713
  • 120 $2.5463
  • 510 $2.1612
  • 1,020 $2.0583
$2.0583 / $5.4600 Buy Now
DISTI # IHW30N160R5XKSA1
Avnet Americas Transistor IGBT N-CH 1600V 60A 3-Pin TO-247 Tube - Rail/Tube (Alt: IHW30N160R5XKSA1) RoHS: Compliant Min Qty: 30 Package Multiple: 1 Lead time: 19 Weeks, 0 Days Container: Tube 240
  • 30 $2.2888
$2.2888 Buy Now
DISTI # 99AC0314
Avnet Americas Transistor IGBT N-CH 1600V 60A 3-Pin TO-247 Tube - Bulk (Alt: 99AC0314) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 26 Weeks, 4 Days Container: Bulk 2106 Partner Stock
  • 1 $5.7800
  • 10 $5.6300
  • 25 $3.5300
  • 50 $3.3000
  • 100 $3.0600
$3.0600 / $5.7800 Buy Now
DISTI # 726-IHW30N160R5XKSA1
Mouser Electronics IGBTs HOME APPLIANCES 14 RoHS: Compliant 3410
  • 1 $5.6000
  • 10 $5.5900
  • 25 $3.2100
  • 100 $2.6600
  • 240 $2.6500
  • 480 $2.1600
$2.1600 / $5.6000 Buy Now
Future Electronics IHW30N160R5 Series 1600 V 60 A Through Hole Reverse Conducting IGBT - TO247-3 RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Lead time: 19 Weeks Container: Tube 0
Tube
  • 30 $2.1900
  • 120 $2.1500
  • 300 $2.1300
  • 750 $2.1100
  • 1,200 $2.0700
$2.0700 / $2.1900 Buy Now
Future Electronics IHW30N160R5 Series 1600 V 60 A Through Hole Reverse Conducting IGBT - TO247-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 19 Weeks Container: Bulk 0
Bulk
  • 1 $2.2300
  • 25 $2.1900
  • 100 $2.1500
  • 250 $2.1300
  • 1,000 $2.0700
$2.0700 / $2.2300 Buy Now
DISTI # 71240058
Verical Reverse Conducting IGBT With Monolithic Body Diode RoHS: Compliant Min Qty: 6 Package Multiple: 1 Date Code: 2325 Americas - 3645
  • 6 $5.9000
  • 10 $5.1000
  • 50 $3.8375
  • 100 $3.1875
  • 200 $2.9875
  • 480 $2.6500
  • 960 $2.4750
  • 1,920 $2.3375
$2.3375 / $5.9000 Buy Now
DISTI # 87212517
Verical Reverse Conducting IGBT With Monolithic Body Diode RoHS: Compliant Min Qty: 3 Package Multiple: 1 Date Code: 2449 Americas - 99
  • 3 $5.0304
  • 10 $4.3556
  • 25 $3.2820
  • 100 $2.7197
  • 240 $2.6788
  • 480 $2.3005
  • 1,200 $2.2085
$2.2085 / $5.0304 Buy Now
DISTI # IHW30N160R5XKSA1
TME Transistor: IGBT, 1.6kV, 39A, 131.5W, TO247-3 Min Qty: 1 13
  • 1 $4.3800
  • 10 $3.6700
  • 30 $3.1700
  • 60 $2.8400
  • 120 $2.7700
$2.7700 / $4.3800 Buy Now
ComSIT USA AVAILABLE EU 12376
RFQ
DISTI # C1S322000738768
Chip One Stop IGBT discrete RoHS: Compliant pbFree: Yes Container: Tube 3645
  • 1 $4.7200
  • 10 $4.0800
  • 50 $3.0700
  • 100 $2.5500
  • 200 $2.3900
  • 480 $2.1200
  • 960 $1.9800
  • 1,920 $1.8700
$1.8700 / $4.7200 Buy Now
DISTI # SP001646684
EBV Elektronik Transistor IGBT N-CH 1600V 60A 3-Pin TO-247 Tube (Alt: SP001646684) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 20 Weeks, 0 Days EBV - 0
Buy Now
Win Source Electronics HOME APPLIANCES 14 48481
  • 16 $3.2972
  • 33 $3.0845
  • 51 $2.9782
  • 73 $2.7654
  • 95 $2.6591
  • 118 $2.5527
$2.5527 / $3.2972 Buy Now

Part Details for IHW30N160R5XKSA1

IHW30N160R5XKSA1 CAD Models

IHW30N160R5XKSA1 Part Data Attributes

IHW30N160R5XKSA1 Infineon Technologies AG
Buy Now Datasheet
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IHW30N160R5XKSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 60A I(C), 1600V V(BR)CES, N-Channel, TO-247,
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
Factory Lead Time 26 Weeks, 4 Days
Samacsys Manufacturer Infineon
Collector Current-Max (IC) 60 A
Collector-Emitter Voltage-Max 1600 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 5.8 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 263 W
Reference Standard IEC-61249-2-21
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 411 ns
VCEsat-Max 2.15 V

IHW30N160R5XKSA1 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IHW30N160R5XKSA1 is -40°C to 150°C.

  • Proper thermal management can be achieved by ensuring good heat sink contact, using thermal interface materials, and maintaining a clean and dust-free environment.

  • The recommended gate resistor value for the IHW30N160R5XKSA1 is typically in the range of 10 ohms to 20 ohms, but it may vary depending on the specific application and switching frequency.

  • Yes, the IHW30N160R5XKSA1 can be used in a parallel configuration, but it requires careful consideration of the module's current sharing, thermal management, and gate drive circuitry.

  • The maximum allowable voltage transient for the IHW30N160R5XKSA1 is typically 1.5 times the maximum rated voltage, but it's recommended to consult the datasheet and application notes for specific guidance.