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Insulated Gate Bipolar Transistor, 60A I(C), 1100V V(BR)CES, N-Channel, TO-247, GREEN, PLASTIC PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
85X6004
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Newark | Igbt, 1.1Kv, 60A, 175Deg C, 333W, To-247, Continuous Collector Current:60A, Collector Emitter Saturation Voltage:1.55V, Power Dissipation:333W, Collector Emitter Voltage Max:1.1Kv, No. Of Pins:3Pins, Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon IHW30N110R3FKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
DISTI #
IHW30N110R3FKSA1
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Avnet Americas | Trans IGBT Chip N-CH 1.1KV 60A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IHW30N110R3FKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Container: Tube | 1920 |
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RFQ | |
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Quest Components | 192 |
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$2.1560 / $4.6200 | Buy Now | |
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Rochester Electronics | IHW30N110 - 1100V IGBT with anti-parallel diode RoHS: Compliant Status: Obsolete Min Qty: 1 | 20 |
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$1.9800 / $2.3300 | Buy Now |
DISTI #
IHW30N110R3
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TME | Transistor: IGBT, 1.1kV, 30A, 166W, TO247-3 Min Qty: 1 | 3 |
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$3.5700 / $4.8100 | Buy Now |
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IHW30N110R3FKSA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
IHW30N110R3FKSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 60A I(C), 1100V V(BR)CES, N-Channel, TO-247, GREEN, PLASTIC PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-247 | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Collector Current-Max (IC) | 60 A | |
Collector-Emitter Voltage-Max | 1100 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 6.4 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 333 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 470 ns |
This table gives cross-reference parts and alternative options found for IHW30N110R3FKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IHW30N110R3FKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IHW30N110R3 | Insulated Gate Bipolar Transistor, 60A I(C), 1100V V(BR)CES, N-Channel, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IHW30N110R3FKSA1 vs IHW30N110R3 |