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Part Details for IHW25N120R2 by Infineon Technologies AG
Results Overview of IHW25N120R2 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IHW25N120R2 Information
IHW25N120R2 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IHW25N120R2
| Part # | Distributor | Description | Stock | Price | Buy | |
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Wuhan P&S | 1200V,50A,Reverse Conducting IGBT Min Qty: 1 | 49 |
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$2.2300 / $3.1300 | Buy Now |
Part Details for IHW25N120R2
IHW25N120R2 CAD Models
IHW25N120R2 Part Data Attributes
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IHW25N120R2
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IHW25N120R2
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN
Select a part to compare: |
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-247AC | |
| Package Description | TO-247, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 50 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 6.4 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 365 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 463.6 ns |
Alternate Parts for IHW25N120R2
This table gives cross-reference parts and alternative options found for IHW25N120R2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IHW25N120R2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IHW25N120E1 | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, | IHW25N120R2 vs IHW25N120E1 |
| IHW25N120R2FKSA1 | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN | IHW25N120R2 vs IHW25N120R2FKSA1 |
IHW25N120R2 Frequently Asked Questions (FAQ)
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The maximum junction temperature for the IHW25N120R2 is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
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To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material, and ensure the heat sink is properly mounted and secured. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
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The recommended gate resistor value for the IHW25N120R2 is between 10 ohms and 20 ohms. However, the optimal value may vary depending on the specific application and switching frequency. It's recommended to consult the application note or contact Infineon support for more information.
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Yes, the IHW25N120R2 is suitable for high-reliability applications. Infineon Technologies AG follows a rigorous quality control process, and the device is manufactured using a robust and reliable process. However, it's essential to follow proper design, manufacturing, and testing procedures to ensure the device operates within its specified parameters.
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To protect the IHW25N120R2 from overvoltage and overcurrent, it's recommended to use a suitable voltage regulator and overcurrent protection circuitry. Additionally, consider using a gate driver with built-in overvoltage and overcurrent protection features. Consult the application note or contact Infineon support for more information.