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Transistors / IGBTs / IHW25N120E1XKSA1
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IHW25N120E1XKSA1 by:

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247,

Part Details for IHW25N120E1XKSA1 by Infineon Technologies AG

Overview of IHW25N120E1XKSA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IHW25N120E1XKSA1

Part # Distributor Description Stock Price Buy
DISTI # 34AC1619
Newark Igbt, 1.2Kv, 50A, 150Deg C, 231W, Continuous Collector Current:50A, Collector Emitter Saturation Voltage:1.5V, Power Dissipation:231W, Collector Emitter Voltage Max:1.2Kv, No. Of Pins:3Pins, Operating Temperature Max:150°C Rohs Compliant: Yes |Infineon IHW25N120E1XKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 324
  • 1 $3.4000
  • 10 $2.9600
  • 25 $2.9300
  • 50 $2.7200
  • 100 $2.5100
  • 480 $2.4400
  • 720 $2.0700
$2.0700 / $3.4000 Buy Now
DISTI # IHW25N120E1XKSA1-ND
DigiKey IGBT NPT/TRENCH 1200V 50A TO247 Min Qty: 1 Lead time: 19 Weeks Container: Tube 127
In Stock
  • 1 $3.2900
  • 30 $2.6087
  • 120 $2.2359
  • 510 $1.9875
  • 1,020 $1.7018
  • 2,010 $1.6024
  • 5,010 $1.5374
$1.5374 / $3.2900 Buy Now
DISTI # IHW25N120E1XKSA1
Avnet Americas Trans IGBT Chip N-CH 1200V 50A 3 TO-247 Tube - Rail/Tube (Alt: IHW25N120E1XKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 19 Weeks, 0 Days Container: Tube 0
  • 240 $2.0908
  • 300 $2.0293
  • 540 $1.9678
  • 1,200 $1.9063
  • 2,400 $1.8449
  • 12,000 $1.7834
  • 24,000 $1.7219
$1.7219 / $2.0908 Buy Now
DISTI # 34AC1619
Avnet Americas Trans IGBT Chip N-CH 1200V 50A 3 TO-247 Tube - Bulk (Alt: 34AC1619) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk 17 Partner Stock
  • 1 $3.5400
  • 10 $3.0600
  • 25 $3.0100
  • 50 $2.7900
  • 100 $2.5700
$2.5700 / $3.5400 Buy Now
DISTI # 726-IHW25N120E1XKSA1
Mouser Electronics IGBT Transistors IGBT PRODUCTS RoHS: Compliant 173
  • 1 $3.0500
  • 10 $2.8600
  • 25 $2.4300
  • 100 $2.1500
  • 480 $1.7000
  • 1,200 $1.6000
  • 2,640 $1.5300
$1.5300 / $3.0500 Buy Now
Future Electronics 1200 V, 25 A IGBT Discrete with anti-parallel diode in TO-247 package RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $1.7500
  • 120 $1.7000
  • 450 $1.6500
  • 900 $1.6300
  • 2,250 $1.5700
$1.5700 / $1.7500 Buy Now
Rochester Electronics HOME APPLIANCES 14 RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 326
  • 1 $1.7900
  • 25 $1.7600
  • 100 $1.6900
  • 500 $1.6100
  • 1,000 $1.5200
$1.5200 / $1.7900 Buy Now
DISTI # IHW25N120E1XKSA1
TME Transistor: IGBT, TRENCHSTOP™ RC, 1.2kV, 25A, 92.4W, TO247-3 Min Qty: 1 0
  • 1 $3.3400
  • 3 $3.0100
  • 10 $2.6500
  • 30 $2.3900
$2.3900 / $3.3400 RFQ
Ameya Holding Limited   Min Qty: 30 420
  • 30 $3.0310
  • 60 $2.9400
  • 120 $2.8519
$2.8519 / $3.0310 Buy Now
DISTI # SP001391910
EBV Elektronik Trans IGBT Chip N-CH 1200V 50A 3 TO-247 Tube (Alt: SP001391910) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 21 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IHW25N120E1XKSA1

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IHW25N120E1XKSA1 Part Data Attributes:

Parametric Data
IHW25N120E1XKSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IHW25N120E1XKSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247,
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks, 3 Days
Samacsys Manufacturer Infineon
Collector Current-Max (IC) 50 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1677 ns

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