Datasheets
IHW20N120R3FKSA1 by:

Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-247, GREEN, PLASTIC PACKAGE-3

Part Details for IHW20N120R3FKSA1 by Infineon Technologies AG

Overview of IHW20N120R3FKSA1 by Infineon Technologies AG

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Applications Industrial Automation Electronic Manufacturing

Price & Stock for IHW20N120R3FKSA1

Part # Distributor Description Stock Price Buy
DISTI # 1832349
element14 Asia-Pacific IGBT+ DIODE,1200V,20A,TO247 RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $2.7925
  • 10 $2.3419
  • 100 $1.8691
  • 500 $1.7509
  • 1,000 $1.6031
$1.6031 / $2.7925 Buy Now
DISTI # 1832349
Farnell IGBT+ DIODE,1200V,20A,TO247 RoHS: Compliant Min Qty: 1 Lead time: 51 Weeks, 1 Days Container: Each 0
  • 1 $3.7663
  • 10 $3.1386
  • 100 $2.5862
$2.5862 / $3.7663 Buy Now

Part Details for IHW20N120R3FKSA1

IHW20N120R3FKSA1 CAD Models

IHW20N120R3FKSA1 Part Data Attributes:

IHW20N120R3FKSA1 Infineon Technologies AG
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IHW20N120R3FKSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-247, GREEN, PLASTIC PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-247
Package Description GREEN, PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer Infineon
Collector Current-Max (IC) 40 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 538 ns

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