Datasheets
IGZ75N65H5XKSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 119A I(C), 650V V(BR)CES, N-Channel, TO-247, 4 PIN

Part Details for IGZ75N65H5XKSA1 by Infineon Technologies AG

Overview of IGZ75N65H5XKSA1 by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IGZ75N65H5XKSA1

Part # Distributor Description Stock Price Buy
DISTI # IGZ75N65H5XKSA1-ND
DigiKey IGBT TRENCH 650V 119A TO247-4 Min Qty: 1 Lead time: 19 Weeks Container: Tube 218
In Stock
  • 1 $6.1400
  • 10 $5.2600
  • 240 $4.1252
  • 720 $3.8674
  • 1,200 $3.4806
  • 2,160 $3.2615
$3.2615 / $6.1400 Buy Now
DISTI # IGZ75N65H5XKSA1
Avnet Americas Trans IGBT Chip N-CH 650V 119A 4-Pin TO-247 Tube - Rail/Tube (Alt: IGZ75N65H5XKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 19 Weeks, 0 Days Container: Tube 0
  • 240 $3.9567
$3.9567 Buy Now
DISTI # 726-IGZ75N65H5XKSA1
Mouser Electronics IGBT Transistors IGBT PRODUCTS RoHS: Compliant 89
  • 1 $6.1300
  • 10 $5.2500
  • 25 $4.9100
  • 100 $4.6600
  • 240 $3.9400
  • 480 $3.8600
  • 1,200 $3.2600
$3.2600 / $6.1300 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 240 Container: Tube 0
Tube
  • 240 $3.5500
$3.5500 Buy Now
Rochester Electronics IGZ75N65 - Discrete IGBT without Anti-Parallel Diode RoHS: Compliant Status: Active Min Qty: 1 3720
  • 1 $3.7200
  • 25 $3.6500
  • 100 $3.5000
  • 500 $3.3500
  • 1,000 $3.1600
$3.1600 / $3.7200 Buy Now
DISTI # IGZ75N65H5XKSA1
TME Transistor: IGBT, 650V, 75A, 197W, TO247-4 Min Qty: 1 0
  • 1 $4.7600
  • 5 $4.1000
  • 25 $3.2900
  • 100 $2.9600
$2.9600 / $4.7600 RFQ
Ameya Holding Limited IGBT 650V 75A SGL TO-247-4 44
RFQ
DISTI # SP001160054
EBV Elektronik Trans IGBT Chip N-CH 650V 119A 4-Pin TO-247 Tube (Alt: SP001160054) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 23 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IGZ75N65H5XKSA1

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IGZ75N65H5XKSA1 Part Data Attributes:

IGZ75N65H5XKSA1 Infineon Technologies AG
Buy Now Datasheet
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IGZ75N65H5XKSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 119A I(C), 650V V(BR)CES, N-Channel, TO-247, 4 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T4
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 19 Weeks
Samacsys Manufacturer Infineon
Case Connection COLLECTOR
Collector Current-Max (IC) 119 A
Collector-Emitter Voltage-Max 650 V
Configuration SINGLE WITH BUILT-IN DIODE
JESD-30 Code R-PSFM-T4
JESD-609 Code e3
Number of Elements 1
Number of Terminals 4
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 415 ns
Turn-on Time-Nom (ton) 37 ns

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