Datasheets
IGW75N60T by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN

Part Details for IGW75N60T by Infineon Technologies AG

Overview of IGW75N60T by Infineon Technologies AG

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Price & Stock for IGW75N60T

Part # Distributor Description Stock Price Buy
DISTI # 726-IGW75N60T
Mouser Electronics IGBT Transistors LOW LOSS IGBT TECH 600V 75A RoHS: Compliant 299
  • 1 $5.8400
  • 10 $4.9100
  • 25 $4.6300
  • 100 $3.9700
  • 240 $3.7400
  • 480 $3.5200
  • 1,200 $3.1200
$3.1200 / $5.8400 Buy Now
Bristol Electronics   40
RFQ
DISTI # IGW75N60T
TME Transistor: IGBT, 600V, 75A, 428W, TO247-3 Min Qty: 1 0
  • 1 $8.6400
  • 3 $7.7700
  • 10 $6.8700
  • 30 $6.1700
$6.1700 / $8.6400 RFQ
LCSC TO-247-3 IGBTs ROHS 23
  • 1 $10.0789
  • 10 $8.8420
  • 30 $8.0870
  • 100 $7.4544
$7.4544 / $10.0789 Buy Now
Sense Electronic Company Limited TO247 1130
RFQ

Part Details for IGW75N60T

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IGW75N60T Part Data Attributes:

IGW75N60T Infineon Technologies AG
Buy Now Datasheet
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IGW75N60T Infineon Technologies AG Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-247AD
Package Description TO-247, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection COLLECTOR
Collector Current-Max (IC) 150 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Gate-Emitter Thr Voltage-Max 5.7 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 428 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 401 ns
Turn-on Time-Nom (ton) 69 ns

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