Datasheets
IGW50N65H5FKSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor,

Part Details for IGW50N65H5FKSA1 by Infineon Technologies AG

Overview of IGW50N65H5FKSA1 by Infineon Technologies AG

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Applications Industrial Automation

Price & Stock for IGW50N65H5FKSA1

Part # Distributor Description Stock Price Buy
DISTI # IGW50N65H5FKSA1-ND
DigiKey IGBT 650V 80A TO247-3 Min Qty: 1 Lead time: 22 Weeks Container: Tube Temporarily Out of Stock
  • 1 $4.0400
  • 30 $3.2010
  • 120 $2.7437
  • 510 $2.4389
  • 1,020 $2.0883
  • 2,010 $1.9663
  • 5,010 $1.8865
$1.8865 / $4.0400 Buy Now
DISTI # IGW50N65H5FKSA1
Avnet Americas Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: IGW50N65H5FKSA1) RoHS: Compliant Min Qty: 30 Package Multiple: 1 Lead time: 19 Weeks, 0 Days Container: Tube 300
  • 30 $2.3393
$2.3393 Buy Now
DISTI # 726-IGW50N65H5FKSA1
Mouser Electronics IGBT Transistors IGBT PRODUCTS RoHS: Compliant 122
  • 1 $4.1300
  • 25 $3.2700
  • 100 $2.8000
  • 240 $2.6500
  • 480 $2.0700
  • 1,200 $1.9600
  • 2,640 $1.8800
$1.8800 / $4.1300 Buy Now
Future Electronics IGW50N65H5 Series 650 V 80 A Through Hole TRENCHSTOPTM 5 Gen IGBT - TO247-3 RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $2.0300
  • 480 $2.0000
  • 720 $1.9800
  • 960 $1.9700
  • 1,200 $1.9300
$1.9300 / $2.0300 Buy Now
Future Electronics IGW50N65H5 Series 650 V 80 A Through Hole TRENCHSTOPTM 5 Gen IGBT - TO247-3 RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $2.0300
  • 480 $2.0000
  • 720 $1.9800
  • 960 $1.9700
  • 1,200 $1.9300
$1.9300 / $2.0300 Buy Now
Rochester Electronics IGW50N65 - Discrete IGBT without Anti-Parallel Diode ' RoHS: Compliant Status: Active Min Qty: 1 112
  • 1 $2.2000
  • 25 $2.1600
  • 100 $2.0700
  • 500 $1.9800
  • 1,000 $1.8700
$1.8700 / $2.2000 Buy Now
DISTI # IGW50N65H5FKSA1
Avnet Americas Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: IGW50N65H5FKSA1) RoHS: Compliant Min Qty: 30 Package Multiple: 1 Lead time: 19 Weeks, 0 Days Container: Tube 300
  • 30 $2.3393
$2.3393 Buy Now
DISTI # IGW50N65H5FKSA1
TME Transistor: IGBT, 650V, 50A, 305W, TO247-3 Min Qty: 1 0
  • 1 $5.6400
  • 5 $4.8500
  • 30 $3.8900
  • 120 $3.5000
$3.5000 / $5.6400 RFQ
Ameya Holding Limited   Min Qty: 30 272
  • 30 $4.0101
  • 150 $3.6092
$3.6092 / $4.0101 Buy Now
DISTI # SP001001744
EBV Elektronik Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: SP001001744) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 23 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IGW50N65H5FKSA1

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IGW50N65H5FKSA1 Part Data Attributes:

IGW50N65H5FKSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IGW50N65H5FKSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor,
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 19 Weeks
Samacsys Manufacturer Infineon
Case Connection COLLECTOR
Collector Current-Max (IC) 80 A
Collector-Emitter Voltage-Max 650 V
Configuration SINGLE
Gate-Emitter Thr Voltage-Max 4.8 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 305 W
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 231 ns
Turn-on Time-Nom (ton) 35 ns
VCEsat-Max 2.1 V

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