Part Details for IGW50N60H3 by Infineon Technologies AG
Overview of IGW50N60H3 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
Price & Stock for IGW50N60H3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IGW50N60H3
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Mouser Electronics | IGBTs 600V 50A 333W RoHS: Compliant | 253 |
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$2.2300 / $4.7800 | Buy Now |
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DISTI #
IGW50N60H3
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TME | Transistor: IGBT, 600V, 50A, 333W, TO247-3, H3 Min Qty: 1 | 36 |
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$3.0200 / $4.8100 | Buy Now |
|
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LCSC | TO-247-3 IGBT Transistors / Modules ROHS | 20 |
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$6.2856 | Buy Now |
Part Details for IGW50N60H3
IGW50N60H3 CAD Models
IGW50N60H3 Part Data Attributes
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IGW50N60H3
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IGW50N60H3
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247, GREEN, PLASTIC PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-247 | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Collector Current-Max (IC) | 100 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE | |
| Gate-Emitter Thr Voltage-Max | 5.7 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 333 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 297 ns | |
| Turn-on Time-Nom (ton) | 54 ns |