Part Details for IGW40N60H3 by Infineon Technologies AG
Overview of IGW40N60H3 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IGW40N60H3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IGW40N60H3
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Mouser Electronics | IGBT Transistors 600V 40A 306W RoHS: Compliant | 535 |
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$2.1700 / $4.1600 | Buy Now |
DISTI #
IGW40N60H3
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TME | Transistor: IGBT, 600V, 40A, 306W, TO247-3, H3 Min Qty: 1 | 0 |
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$3.0300 / $4.1000 | RFQ |
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Chip1Cloud | High speed IGBT in Trench and Fieldstop technology | 19700 |
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RFQ |
Part Details for IGW40N60H3
IGW40N60H3 CAD Models
IGW40N60H3 Part Data Attributes
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IGW40N60H3
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IGW40N60H3
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247, GREEN, PLASTIC PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-247 | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Collector Current-Max (IC) | 80 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE | |
Gate-Emitter Thr Voltage-Max | 5.7 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 306 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 249 ns | |
Turn-on Time-Nom (ton) | 48 ns |
Alternate Parts for IGW40N60H3
This table gives cross-reference parts and alternative options found for IGW40N60H3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IGW40N60H3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRGP4640-EPBF | Insulated Gate Bipolar Transistor, 65A I(C), 600V V(BR)CES, N-Channel, | Infineon Technologies AG | IGW40N60H3 vs IRGP4640-EPBF |