Datasheets
IGW30N60TPXKSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 53A I(C), 600V V(BR)CES, N-Channel, TO-247,

Part Details for IGW30N60TPXKSA1 by Infineon Technologies AG

Overview of IGW30N60TPXKSA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IGW30N60TPXKSA1

Part # Distributor Description Stock Price Buy
DISTI # 34AC1613
Newark Igbt, Single, 600V, 53A, To-247, Dc Collector Current:53A, Collector Emitter Saturation Voltage Vce(On):1.6V, Power Dissipation Pd:200W, Collector Emitter Voltage V(Br)Ceo:600V, Transistor Case Style:To-247, No. Of Pins:3Pins, Rohs Compliant: Yes |Infineon IGW30N60TPXKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $2.3000
  • 10 $1.9500
  • 100 $1.5700
  • 500 $1.4500
  • 1,000 $1.3000
  • 2,500 $1.0500
  • 5,000 $1.0200
$1.0200 / $2.3000 Buy Now
DISTI # IGW30N60TPXKSA1-ND
DigiKey IGBT TRENCH/FS 600V 53A TO247-3 Min Qty: 1 Lead time: 19 Weeks Container: Tube 4483
In Stock
  • 1 $2.5100
  • 30 $2.0153
  • 120 $1.6581
  • 510 $1.4030
  • 1,020 $1.1905
  • 2,010 $1.1309
  • 5,010 $1.0884
$1.0884 / $2.5100 Buy Now
DISTI # IGW30N60TPXKSA1
Avnet Americas Trans IGBT Chip N-CH 600V 53A 3 TO-247 Tube - Rail/Tube (Alt: IGW30N60TPXKSA1) RoHS: Compliant Min Qty: 30 Package Multiple: 1 Lead time: 19 Weeks, 0 Days Container: Tube 20
  • 30 $1.1922
  • 40 $1.1571
  • 70 $1.1221
  • 150 $1.0870
  • 300 $1.0519
  • 1,500 $1.0169
  • 3,000 $0.9818
$0.9818 / $1.1922 Buy Now
DISTI # 726-IGW30N60TPXKSA1
Mouser Electronics IGBT Transistors INDUSTRY 14 RoHS: Compliant 512
  • 1 $2.5100
  • 10 $1.7900
  • 100 $1.6600
  • 240 $1.6400
  • 480 $1.1900
  • 1,200 $1.1300
  • 2,640 $1.0800
$1.0800 / $2.5100 Buy Now
DISTI # 73928855
RS Transistor, high speed IGBT in trench and fieldstop, 600V, 30A, 30KHZ, TO-247 | Infineon IGW30N60TPXKSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 2 Weeks, 0 Days Container: Bulk 0
  • 1 $2.5100
  • 5 $2.3100
  • 10 $2.2100
  • 100 $2.0100
  • 250 $1.8800
$1.8800 / $2.5100 RFQ
Future Electronics IGW30N60TP Series 600 V 53 A Through Hole IGBT - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $1.1600
  • 120 $1.1100
  • 450 $1.0600
  • 1,200 $1.0200
  • 3,000 $0.9650
$0.9650 / $1.1600 Buy Now
DISTI # SP001379674
EBV Elektronik Trans IGBT Chip N-CH 600V 53A 3 TO-247 Tube (Alt: SP001379674) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 23 Weeks, 0 Days EBV - 0
Buy Now
LCSC 200W 53A 600V FS(Field Stop) TO-247-3 IGBTs ROHS 5
  • 1 $1.7643
  • 10 $1.5457
  • 30 $1.3572
  • 100 $1.2256
  • 500 $1.1649
  • 1,000 $1.1380
$1.1380 / $1.7643 Buy Now

Part Details for IGW30N60TPXKSA1

IGW30N60TPXKSA1 CAD Models

IGW30N60TPXKSA1 Part Data Attributes:

IGW30N60TPXKSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IGW30N60TPXKSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 53A I(C), 600V V(BR)CES, N-Channel, TO-247,
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 19 Weeks
Samacsys Manufacturer Infineon
Collector Current-Max (IC) 53 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 279 ns
Turn-on Time-Nom (ton) 38 ns

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