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Insulated Gate Bipolar Transistor, 53A I(C), 600V V(BR)CES, N-Channel, TO-247,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
34AC1613
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Newark | Igbt, Single, 600V, 53A, To-247, Dc Collector Current:53A, Collector Emitter Saturation Voltage Vce(On):1.6V, Power Dissipation Pd:200W, Collector Emitter Voltage V(Br)Ceo:600V, Transistor Case Style:To-247, No. Of Pins:3Pins, Rohs Compliant: Yes |Infineon IGW30N60TPXKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$1.0200 / $2.3000 | Buy Now |
DISTI #
IGW30N60TPXKSA1-ND
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DigiKey | IGBT TRENCH/FS 600V 53A TO247-3 Min Qty: 1 Lead time: 19 Weeks Container: Tube |
4483 In Stock |
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$1.0884 / $2.5100 | Buy Now |
DISTI #
IGW30N60TPXKSA1
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Avnet Americas | Trans IGBT Chip N-CH 600V 53A 3 TO-247 Tube - Rail/Tube (Alt: IGW30N60TPXKSA1) RoHS: Compliant Min Qty: 30 Package Multiple: 1 Lead time: 19 Weeks, 0 Days Container: Tube | 20 |
|
$0.9818 / $1.1922 | Buy Now |
DISTI #
726-IGW30N60TPXKSA1
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Mouser Electronics | IGBT Transistors INDUSTRY 14 RoHS: Compliant | 512 |
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$1.0800 / $2.5100 | Buy Now |
DISTI #
73928855
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RS | Transistor, high speed IGBT in trench and fieldstop, 600V, 30A, 30KHZ, TO-247 | Infineon IGW30N60TPXKSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 2 Weeks, 0 Days Container: Bulk | 0 |
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$1.8800 / $2.5100 | RFQ |
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Future Electronics | IGW30N60TP Series 600 V 53 A Through Hole IGBT - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Container: Tube | 0Tube |
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$0.9650 / $1.1600 | Buy Now |
DISTI #
SP001379674
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EBV Elektronik | Trans IGBT Chip N-CH 600V 53A 3 TO-247 Tube (Alt: SP001379674) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 23 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 200W 53A 600V FS(Field Stop) TO-247-3 IGBTs ROHS | 5 |
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$1.1380 / $1.7643 | Buy Now |
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IGW30N60TPXKSA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
IGW30N60TPXKSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 53A I(C), 600V V(BR)CES, N-Channel, TO-247,
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 19 Weeks | |
Samacsys Manufacturer | Infineon | |
Collector Current-Max (IC) | 53 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Min | -40 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 279 ns | |
Turn-on Time-Nom (ton) | 38 ns |