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Insulated Gate Bipolar Transistor, 9.5A I(C), 600V V(BR)CES, N-Channel, TO-251,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
39AH8874
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Newark | Igbt, 600V, 9.5A, 175Deg C, 42W Rohs Compliant: Yes |Infineon IGU04N60TAKMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
DISTI #
448-IGU04N60TAKMA1-ND
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DigiKey | IGBT TRENCH 600V 8A TO251-3 Min Qty: 1 Lead time: 19 Weeks Container: Tube |
1553 In Stock |
|
$0.4793 / $1.5900 | Buy Now |
DISTI #
IGU04N60TAKMA1
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Avnet Americas | Trans IGBT Chip N-CH 600V 8A 3-Pin TO-251 Tube - Rail/Tube (Alt: IGU04N60TAKMA1) RoHS: Compliant Min Qty: 1500 Package Multiple: 75 Lead time: 19 Weeks, 0 Days Container: Tube | 0 |
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RFQ | |
DISTI #
71243253
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Verical | Trans IGBT Chip N-CH 600V 8A 42W 3-Pin(3+Tab) TO-251 Tube Min Qty: 18 Package Multiple: 1 Date Code: 2241 | Americas - 1500 |
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$0.6125 / $1.7875 | Buy Now |
DISTI #
IGU04N60TAKMA1
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TME | Transistor: IGBT, 600V, 4A, 42W, TO251 Min Qty: 1 | 899 |
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$0.5580 / $1.0720 | Buy Now |
DISTI #
C1S322001059507
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Chip1Stop | IGBT discrete RoHS: Compliant Container: Tube | 1500 |
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$0.4900 / $1.5400 | Buy Now |
DISTI #
SP001045846
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EBV Elektronik | Trans IGBT Chip N-CH 600V 8A 3-Pin TO-251 Tube (Alt: SP001045846) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 23 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
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IGU04N60TAKMA1
Infineon Technologies AG
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Datasheet
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IGU04N60TAKMA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 9.5A I(C), 600V V(BR)CES, N-Channel, TO-251,
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | IN-LINE, R-PSIP-T3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 19 Weeks | |
Samacsys Manufacturer | Infineon | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 9.5 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
JEDEC-95 Code | TO-251 | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Min | -40 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 268 ns | |
Turn-on Time-Nom (ton) | 24 ns |