Datasheets
IGU04N60TAKMA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 9.5A I(C), 600V V(BR)CES, N-Channel, TO-251,

Part Details for IGU04N60TAKMA1 by Infineon Technologies AG

Overview of IGU04N60TAKMA1 by Infineon Technologies AG

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Applications Industrial Automation Automotive Motor control systems

Price & Stock for IGU04N60TAKMA1

Part # Distributor Description Stock Price Buy
DISTI # 39AH8874
Newark Igbt, 600V, 9.5A, 175Deg C, 42W Rohs Compliant: Yes |Infineon IGU04N60TAKMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # 448-IGU04N60TAKMA1-ND
DigiKey IGBT TRENCH 600V 8A TO251-3 Min Qty: 1 Lead time: 19 Weeks Container: Tube 1553
In Stock
  • 1 $1.5900
  • 75 $0.7047
  • 150 $0.6306
  • 525 $0.5251
  • 1,050 $0.4793
$0.4793 / $1.5900 Buy Now
DISTI # IGU04N60TAKMA1
Avnet Americas Trans IGBT Chip N-CH 600V 8A 3-Pin TO-251 Tube - Rail/Tube (Alt: IGU04N60TAKMA1) RoHS: Compliant Min Qty: 1500 Package Multiple: 75 Lead time: 19 Weeks, 0 Days Container: Tube 0
RFQ
DISTI # 71243253
Verical Trans IGBT Chip N-CH 600V 8A 42W 3-Pin(3+Tab) TO-251 Tube Min Qty: 18 Package Multiple: 1 Date Code: 2241 Americas - 1500
  • 18 $1.7875
  • 50 $1.6250
  • 100 $0.8538
  • 200 $0.7637
  • 1,000 $0.6138
  • 1,500 $0.6125
$0.6125 / $1.7875 Buy Now
DISTI # IGU04N60TAKMA1
TME Transistor: IGBT, 600V, 4A, 42W, TO251 Min Qty: 1 899
  • 1 $1.0720
  • 10 $0.8930
  • 75 $0.8260
  • 300 $0.7370
  • 900 $0.6470
  • 1,800 $0.5580
$0.5580 / $1.0720 Buy Now
DISTI # C1S322001059507
Chip1Stop IGBT discrete RoHS: Compliant Container: Tube 1500
  • 5 $1.5400
  • 10 $1.4300
  • 50 $1.3000
  • 100 $0.6830
  • 200 $0.6110
  • 1,000 $0.4910
  • 1,500 $0.4900
$0.4900 / $1.5400 Buy Now
DISTI # SP001045846
EBV Elektronik Trans IGBT Chip N-CH 600V 8A 3-Pin TO-251 Tube (Alt: SP001045846) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 23 Weeks, 0 Days EBV - 0
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Part Details for IGU04N60TAKMA1

IGU04N60TAKMA1 CAD Models

IGU04N60TAKMA1 Part Data Attributes

IGU04N60TAKMA1 Infineon Technologies AG
Buy Now Datasheet
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IGU04N60TAKMA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 9.5A I(C), 600V V(BR)CES, N-Channel, TO-251,
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description IN-LINE, R-PSIP-T3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 19 Weeks
Samacsys Manufacturer Infineon
Case Connection COLLECTOR
Collector Current-Max (IC) 9.5 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-251
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 268 ns
Turn-on Time-Nom (ton) 24 ns

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