Part Details for IGT60R190D1SATMA1 by Infineon Technologies AG
Overview of IGT60R190D1SATMA1 by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
Price & Stock for IGT60R190D1SATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
84AC1772
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Newark | Mosfet, N-Ch, 600V, 12.5A, 55.5W, Transistor Polarity:N Channel, Continuous Drain Current Id:12.5A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.14Ohm, Rds(On) Test Voltage Vgs:-, Threshold Voltage Vgs:1.2V, Power Rohs Compliant: Yes |Infineon IGT60R190D1SATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$12.2700 / $13.3400 | Buy Now |
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DISTI #
IGT60R190D1SATMA1
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Avnet Americas | Transistor MOSFET N-CH 600V 12.5A 8-Pin HSOF T/R - Tape and Reel (Alt: IGT60R190D1SATMA1) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Container: Reel | 0 |
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RFQ | |
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DISTI #
IGT60R190D1SATMA1
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TME | Transistor: N-JFET, CoolGaN™, unipolar, HEMT, 600V, 12.5A, Idm: 23A Min Qty: 1 | 7 |
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$9.4100 / $11.2600 | Buy Now |
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DISTI #
SP001701702
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EBV Elektronik | Transistor MOSFET N-CH 600V 12.5A 8-Pin HSOF T/R (Alt: SP001701702) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 27 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IGT60R190D1SATMA1
IGT60R190D1SATMA1 CAD Models
IGT60R190D1SATMA1 Part Data Attributes:
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IGT60R190D1SATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IGT60R190D1SATMA1
Infineon Technologies AG
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 12.5 A | |
| Drain-source On Resistance-Max | 0.19 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 0.15 pF | |
| JESD-30 Code | R-PSSO-F3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 55.5 W | |
| Pulsed Drain Current-Max (IDM) | 23 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | GALLIUM NITRIDE |