Datasheets
IGP50N60T by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

Part Details for IGP50N60T by Infineon Technologies AG

Overview of IGP50N60T by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IGP50N60T

Part # Distributor Description Stock Price Buy
DISTI # 726-IGP50N60T
Mouser Electronics IGBT Transistors LOW LOSS IGBT TECH 600V 50A RoHS: Compliant 586
  • 1 $4.1200
  • 10 $3.4700
  • 25 $3.2700
  • 100 $2.8000
  • 250 $2.7700
  • 500 $2.3400
  • 1,000 $2.1300
  • 2,500 $2.0000
$2.0000 / $4.1200 Buy Now
DISTI # IGP50N60T
TME Transistor: IGBT, 600V, 50A, 333W, TO220-3 Min Qty: 1 0
  • 1 $4.8500
  • 5 $4.2900
  • 25 $3.8500
  • 100 $3.5900
$3.5900 / $4.8500 RFQ
LCSC 333W 90A 600V FS(Field Stop) TO-220-3 IGBTs ROHS 14
  • 1 $2.5880
$2.5880 Buy Now

Part Details for IGP50N60T

IGP50N60T CAD Models

IGP50N60T Part Data Attributes:

IGP50N60T Infineon Technologies AG
Buy Now Datasheet
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IGP50N60T Infineon Technologies AG Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description GREEN, PLASTIC, TO-220, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Additional Feature FAST SWITCHING
Case Connection COLLECTOR
Collector Current-Max (IC) 100 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Gate-Emitter Thr Voltage-Max 5.7 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 333 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 396 ns
Turn-on Time-Nom (ton) 60 ns

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