Part Details for IGP01N120H2XKSA1 by Infineon Technologies AG
Overview of IGP01N120H2XKSA1 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Electronic Manufacturing
Price & Stock for IGP01N120H2XKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | IGP01N120 - Discrete IGBT without Anti-Parallel Diode ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 13500 |
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$0.4840 / $0.5694 | Buy Now |
Part Details for IGP01N120H2XKSA1
IGP01N120H2XKSA1 CAD Models
IGP01N120H2XKSA1 Part Data Attributes
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IGP01N120H2XKSA1
Infineon Technologies AG
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Datasheet
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IGP01N120H2XKSA1
Infineon Technologies AG
Power Bipolar Transistor, 3.2A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-220AB | |
| Package Description | ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 3.2 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | NPN | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |