Part Details for IGC99T120T6RLX1SA2 by Infineon Technologies AG
Overview of IGC99T120T6RLX1SA2 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IGC99T120T6RLX1SA2
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DISTI #
IGC99T120T6RLX1SA2
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Avnet Americas | IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IGC99T120T6RLX1SA2) RoHS: Compliant Min Qty: 37 Package Multiple: 1 Container: Waffle Pack | 0 |
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RFQ |
Part Details for IGC99T120T6RLX1SA2
IGC99T120T6RLX1SA2 CAD Models
IGC99T120T6RLX1SA2 Part Data Attributes
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IGC99T120T6RLX1SA2
Infineon Technologies AG
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Datasheet
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IGC99T120T6RLX1SA2
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, 10.39 X 9.50 MM, DIE
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | DIE | |
| Package Description | UNCASED CHIP, R-XUUC-N | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE | |
| JESD-30 Code | R-XUUC-N | |
| Number of Elements | 1 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | UNCASED CHIP | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |