Datasheets
IGC99T120T6RLX1SA2 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, 10.39 X 9.50 MM, DIE

Part Details for IGC99T120T6RLX1SA2 by Infineon Technologies AG

Overview of IGC99T120T6RLX1SA2 by Infineon Technologies AG

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Price & Stock for IGC99T120T6RLX1SA2

Part # Distributor Description Stock Price Buy
DISTI # IGC99T120T6RLX1SA2
Avnet Americas IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IGC99T120T6RLX1SA2) RoHS: Compliant Min Qty: 37 Package Multiple: 1 Container: Waffle Pack 0
RFQ

Part Details for IGC99T120T6RLX1SA2

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IGC99T120T6RLX1SA2 Part Data Attributes

IGC99T120T6RLX1SA2 Infineon Technologies AG
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IGC99T120T6RLX1SA2 Infineon Technologies AG Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, 10.39 X 9.50 MM, DIE
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code DIE
Package Description UNCASED CHIP, R-XUUC-N
Reach Compliance Code compliant
ECCN Code EAR99
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE
JESD-30 Code R-XUUC-N
Number of Elements 1
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style UNCASED CHIP
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form NO LEAD
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

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