Part Details for IGC36T120T6L by Infineon Technologies AG
Overview of IGC36T120T6L by Infineon Technologies AG
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- Part Data Attributes: (Available)
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
Part Details for IGC36T120T6L
IGC36T120T6L CAD Models
IGC36T120T6L Part Data Attributes
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IGC36T120T6L
Infineon Technologies AG
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Datasheet
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IGC36T120T6L
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, 6.36 X 5.67 MM, DIE
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | DIE | |
Package Description | UNCASED CHIP, R-XUUC-N | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE | |
Gate-Emitter Thr Voltage-Max | 6.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUUC-N | |
Number of Elements | 1 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | UNCASED CHIP | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |