Part Details for IGC136T170S8RH2 by Infineon Technologies AG
Overview of IGC136T170S8RH2 by Infineon Technologies AG
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- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IGC136T170S8RH2
IGC136T170S8RH2 CAD Models
IGC136T170S8RH2 Part Data Attributes
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IGC136T170S8RH2
Infineon Technologies AG
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Datasheet
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IGC136T170S8RH2
Infineon Technologies AG
Insulated Gate Bipolar Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Collector-Emitter Voltage-Max | 1700 V | |
| Gate-Emitter Thr Voltage-Max | 6.3 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-Channel | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 1.3 V |