Part Details for IGB03N120H2ATMA1 by Infineon Technologies AG
Results Overview of IGB03N120H2ATMA1 by Infineon Technologies AG
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- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IGB03N120H2ATMA1 Information
IGB03N120H2ATMA1 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IGB03N120H2ATMA1
IGB03N120H2ATMA1 CAD Models
IGB03N120H2ATMA1 Part Data Attributes
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IGB03N120H2ATMA1
Infineon Technologies AG
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Datasheet
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IGB03N120H2ATMA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 9.6A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | D2PAK | |
Package Description | ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN | |
Pin Count | 4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 9.6 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 403 ns | |
Turn-on Time-Nom (ton) | 16.1 ns |