Datasheets
IGB03N120H2ATMA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 9.6A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN

Part Details for IGB03N120H2ATMA1 by Infineon Technologies AG

Results Overview of IGB03N120H2ATMA1 by Infineon Technologies AG

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Applications Industrial Automation Electronic Manufacturing

IGB03N120H2ATMA1 Information

IGB03N120H2ATMA1 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for IGB03N120H2ATMA1

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IGB03N120H2ATMA1 Part Data Attributes

IGB03N120H2ATMA1 Infineon Technologies AG
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IGB03N120H2ATMA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 9.6A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN
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Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code D2PAK
Package Description ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection COLLECTOR
Collector Current-Max (IC) 9.6 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 403 ns
Turn-on Time-Nom (ton) 16.1 ns

IGB03N120H2ATMA1 Related Parts

IGB03N120H2ATMA1 Frequently Asked Questions (FAQ)

  • The maximum operating temperature of the IGBT module is 150°C, as specified in the datasheet. However, it's recommended to operate it at a maximum temperature of 125°C for reliable long-term operation.

  • Proper thermal management is crucial for the IGBT module. Ensure good thermal contact between the module and the heat sink, use a thermal interface material if necessary, and provide adequate airflow to dissipate heat.

  • The recommended gate resistor value depends on the specific application and switching frequency. A typical value is around 10-20 ohms, but it's recommended to consult the datasheet and application notes for more information.

  • Yes, the IGBT module can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the modules are properly matched, and the gate drive circuits are synchronized to prevent uneven current sharing.

  • Use a suitable overvoltage protection circuit, such as a voltage clamp or a zener diode, to protect the IGBT module from voltage spikes. Additionally, implement overcurrent protection using a current sensor and a protection circuit to prevent damage from excessive currents.