Part Details for IGB03N120H2ATMA1 by Infineon Technologies AG
Overview of IGB03N120H2ATMA1 by Infineon Technologies AG
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Applications
Industrial Automation
Electronic Manufacturing
Part Details for IGB03N120H2ATMA1
IGB03N120H2ATMA1 CAD Models
IGB03N120H2ATMA1 Part Data Attributes
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IGB03N120H2ATMA1
Infineon Technologies AG
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Datasheet
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IGB03N120H2ATMA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 9.6A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 9.6 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 403 ns | |
Turn-on Time-Nom (ton) | 16.1 ns |