Datasheets
IFS200B12N3E4B31BPSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 280A I(C), 1200V V(BR)CES, N-Channel, MODULE-41

Part Details for IFS200B12N3E4B31BPSA1 by Infineon Technologies AG

Overview of IFS200B12N3E4B31BPSA1 by Infineon Technologies AG

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Applications Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for IFS200B12N3E4B31BPSA1

Part # Distributor Description Stock Price Buy
DISTI # 448-IFS200B12N3E4B31BPSA1-ND
DigiKey IGBT MOD 1200V 400A 940W Min Qty: 10 Lead time: 15 Weeks Container: Tray Temporarily Out of Stock
  • 10 $206.7500
$206.7500 Buy Now
DISTI # 726-IFS200B12N3E4B31
Mouser Electronics IGBTs 1200 V, 200 A sixpack IGBT module RoHS: Compliant 0
  • 10 $206.7500
$206.7500 Order Now
DISTI # SP001597016
EBV Elektronik MIPAQ Base Module with Trench/Fieldstop IGBT4 and Emitter Controlled HE Diode and NTC (Alt: SP001597016) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IFS200B12N3E4B31BPSA1

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IFS200B12N3E4B31BPSA1 Part Data Attributes

IFS200B12N3E4B31BPSA1 Infineon Technologies AG
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IFS200B12N3E4B31BPSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 280A I(C), 1200V V(BR)CES, N-Channel, MODULE-41
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-XUFM-X41
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 280 A
Collector-Emitter Voltage-Max 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, RESISTOR AND THERMISTOR
JESD-30 Code R-XUFM-X41
Number of Elements 6
Number of Terminals 41
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 528 ns
Turn-on Time-Nom (ton) 185 ns

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