Part Details for IFS100B12N3E4B31BOSA1 by Infineon Technologies AG
Overview of IFS100B12N3E4B31BOSA1 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IFS100B12N3E4B31BOSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
38AJ7550
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Newark | Igbt Module, 1.2Kv, 100A, Solder Rohs Compliant: Yes |Infineon IFS100B12N3E4B31BOSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$262.5300 / $277.9500 | Buy Now |
|
DISTI #
IFS100B12N3E4B31BOSA1-ND
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DigiKey | IGBT MOD 1200V 200A 515W Min Qty: 1 Lead time: 16 Weeks Container: Tray |
13 In Stock |
|
$210.8557 / $233.9200 | Buy Now |
|
DISTI #
SP000643756
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EBV Elektronik | IGBTs (Alt: SP000643756) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 17 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IFS100B12N3E4B31BOSA1
IFS100B12N3E4B31BOSA1 CAD Models
IFS100B12N3E4B31BOSA1 Part Data Attributes:
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IFS100B12N3E4B31BOSA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
IFS100B12N3E4B31BOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR | |
| Gate-Emitter Thr Voltage-Max | 6.4 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X34 | |
| Number of Elements | 6 | |
| Number of Terminals | 34 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 515 W | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 610 ns | |
| Turn-on Time-Nom (ton) | 210 ns | |
| VCEsat-Max | 2.1 V |