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Transistors / RF Small Signal Field-Effect Transistors / IFN5912
Datasheets
IFN5912 by: InterFET Corporation

RF Small Signal Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-78

Part Details for IFN5912 by InterFET Corporation

Overview of IFN5912 by InterFET Corporation

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Price & Stock for IFN5912

Part # Distributor Description Stock Price Buy
DISTI # 106-IFN5912
Mouser Electronics JFET JFET N-Channel(Dual) -25V Low Ciss RoHS: Compliant 0
  • 100 $15.1600
  • 250 $14.1500
  • 500 $12.9300
$12.9300 / $15.1600 Order Now

Part Details for IFN5912

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IFN5912 Part Data Attributes

Parametric Data
IFN5912 InterFET Corporation
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IFN5912 InterFET Corporation RF Small Signal Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-78
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer INTER F E T CORP
Package Description CYLINDRICAL, O-MBCY-W8
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer InterFET
Configuration SEPARATE, 2 ELEMENTS
FET Technology JUNCTION
Feedback Cap-Max (Crss) 1.2 pF
Highest Frequency Band VERY HIGH FREQUENCY BAND
JEDEC-95 Code TO-78
JESD-30 Code O-MBCY-W8
Number of Elements 2
Number of Terminals 8
Operating Mode DEPLETION MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.5 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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