Datasheets
IAUT300N10S5N015ATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 300A I(D), 100V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOF-8-1, 8 PIN

Part Details for IAUT300N10S5N015ATMA1 by Infineon Technologies AG

Overview of IAUT300N10S5N015ATMA1 by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IAUT300N10S5N015ATMA1

Part # Distributor Description Stock Price Buy
DISTI # 59AC7037
Newark Mosfet, N-Ch, 100V, 300A, Hsof, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:300A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IAUT300N10S5N015ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 255
  • 1 $5.7700
  • 10 $4.8600
  • 25 $4.7000
  • 50 $4.3200
  • 100 $3.9300
  • 250 $3.8100
  • 500 $3.4900
  • 1,000 $2.9800
$2.9800 / $5.7700 Buy Now
DISTI # 86AK5139
Newark Mosfet, N-Ch, 100V, 300A, Hsof Rohs Compliant: Yes |Infineon IAUT300N10S5N015ATMA1 Min Qty: 2000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 2,000 $2.8100
$2.8100 Buy Now
DISTI # IAUT300N10S5N015ATMA1CT-ND
DigiKey MOSFET N-CH 100V 300A 8HSOF Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Tape & Reel (TR), Cut Tape (CT) 3005
In Stock
  • 1 $5.5500
  • 10 $4.6610
  • 100 $3.7707
  • 500 $3.3517
  • 1,000 $2.8699
  • 2,000 $2.7024
$2.7024 / $5.5500 Buy Now
DISTI # 726-IAUT300N10S5N015
Mouser Electronics MOSFET MOSFET_(75V 120V( RoHS: Compliant 19299
  • 1 $5.5500
  • 10 $4.6700
  • 25 $4.5100
  • 100 $3.7800
  • 500 $3.3600
  • 1,000 $2.8700
  • 2,000 $2.6500
$2.6500 / $5.5500 Buy Now
Future Electronics IAUT300Nxx Series 100 V 1.5 mOhm 300 A OptiMOS™-5 Power-Transistor-PG-HSOF-8-1 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel 8000
Reel
  • 2,000 $2.6000
$2.6000 Buy Now
Quest Components   40000
  • 1 $12.5697
  • 130 $6.9133
  • 290 $6.2849
$6.2849 / $12.5697 Buy Now
Rochester Electronics IAUT300N10S5 - Optimos Power-Transistor RoHS: Compliant Status: Active Min Qty: 1 167106
  • 1 $3.0200
  • 25 $2.9600
  • 100 $2.8400
  • 500 $2.7200
  • 1,000 $2.5700
$2.5700 / $3.0200 Buy Now
Ameya Holding Limited   9649
RFQ
Chip-Germany GmbH   RoHS: Compliant 2500
RFQ
DISTI # SP001416130
EBV Elektronik Transistor MOSFET N-CH 100V 300A 8-Pin HSOF T/R (Alt: SP001416130) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 19 Weeks, 0 Days EBV - 0
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 2000 4000
  • 2,000 $3.7100
  • 4,000 $3.4700
$3.4700 / $3.7100 Buy Now
Win Source Electronics MOSFET N-CH 100V 300A 8HSOF 25146
  • 8 $6.9240
  • 18 $5.6820
  • 28 $5.5040
  • 38 $5.3270
  • 49 $5.1490
  • 65 $4.6160
$4.6160 / $6.9240 Buy Now

Part Details for IAUT300N10S5N015ATMA1

IAUT300N10S5N015ATMA1 CAD Models

IAUT300N10S5N015ATMA1 Part Data Attributes:

IAUT300N10S5N015ATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IAUT300N10S5N015ATMA1 Infineon Technologies AG Power Field-Effect Transistor, 300A I(D), 100V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOF-8-1, 8 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-F2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 53 Weeks, 1 Day
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 652 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 300 A
Drain-source On Resistance-Max 0.0015 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 126 pF
JESD-30 Code R-PSSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 375 W
Pulsed Drain Current-Max (IDM) 1200 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 118 ns
Turn-on Time-Max (ton) 44 ns

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