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Power Field-Effect Transistor, 300A I(D), 100V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOF-8-1, 8 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
59AC7037
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Newark | Mosfet, N-Ch, 100V, 300A, Hsof, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:300A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IAUT300N10S5N015ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 255 |
|
$2.9800 / $5.7700 | Buy Now |
DISTI #
86AK5139
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Newark | Mosfet, N-Ch, 100V, 300A, Hsof Rohs Compliant: Yes |Infineon IAUT300N10S5N015ATMA1 Min Qty: 2000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$2.8100 | Buy Now |
DISTI #
IAUT300N10S5N015ATMA1CT-ND
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DigiKey | MOSFET N-CH 100V 300A 8HSOF Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Tape & Reel (TR), Cut Tape (CT) |
3005 In Stock |
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$2.7024 / $5.5500 | Buy Now |
DISTI #
726-IAUT300N10S5N015
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Mouser Electronics | MOSFET MOSFET_(75V 120V( RoHS: Compliant | 19299 |
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$2.6500 / $5.5500 | Buy Now |
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Future Electronics | IAUT300Nxx Series 100 V 1.5 mOhm 300 A OptiMOS™-5 Power-Transistor-PG-HSOF-8-1 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 8000Reel |
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$2.6000 | Buy Now |
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Quest Components | 40000 |
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$6.2849 / $12.5697 | Buy Now | |
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Rochester Electronics | IAUT300N10S5 - Optimos Power-Transistor RoHS: Compliant Status: Active Min Qty: 1 | 167106 |
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$2.5700 / $3.0200 | Buy Now |
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Ameya Holding Limited | 9649 |
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RFQ | ||
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Chip-Germany GmbH | RoHS: Compliant | 2500 |
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RFQ | |
DISTI #
SP001416130
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EBV Elektronik | Transistor MOSFET N-CH 100V 300A 8-Pin HSOF T/R (Alt: SP001416130) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 19 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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IAUT300N10S5N015ATMA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
IAUT300N10S5N015ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 300A I(D), 100V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOF-8-1, 8 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-F2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 53 Weeks, 1 Day | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 652 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 300 A | |
Drain-source On Resistance-Max | 0.0015 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 126 pF | |
JESD-30 Code | R-PSSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 375 W | |
Pulsed Drain Current-Max (IDM) | 1200 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 118 ns | |
Turn-on Time-Max (ton) | 44 ns |