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Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
59AC7034
|
Newark | Mosfet, N-Ch, 100V, 260A, Hsof, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:260A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IAUT260N10S5N019ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 835 |
|
$2.4900 / $2.9400 | Buy Now |
DISTI #
86AK5137
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Newark | Mosfet, N-Ch, 100V, 260A, Hsof Rohs Compliant: Yes |Infineon IAUT260N10S5N019ATMA1 Min Qty: 2000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$2.5000 | Buy Now |
DISTI #
IAUT260N10S5N019ATMA1CT-ND
|
DigiKey | MOSFET N-CH 100V 260A 8HSOF Min Qty: 1 Lead time: 18 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
5542 In Stock |
|
$2.3905 / $4.9100 | Buy Now |
DISTI #
726-IAUT260N10S5N01
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Mouser Electronics | MOSFET MOSFET_(75V 120V( RoHS: Compliant | 2050 |
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$2.3800 / $4.7200 | Buy Now |
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Future Electronics | IAUT260Nxx Series 100 V 1.9 mOhm 260 A OptiMOS™-5 Power-Transistor-PG-HSOF-8-1 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 8000Reel |
|
$2.3500 | Buy Now |
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Bristol Electronics | Min Qty: 1 | 125 |
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$2.2324 / $5.1520 | Buy Now |
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Quest Components | 100 |
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$3.2200 / $6.9000 | Buy Now | |
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Rochester Electronics | MOSFET_(75V,120V( RoHS: Compliant Status: Active Min Qty: 1 | 275778 |
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$2.2500 / $2.6500 | Buy Now |
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Ameya Holding Limited | Min Qty: 500 | 11816 |
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$5.7794 / $5.9570 | Buy Now |
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Chip 1 Exchange | INSTOCK | 1889 |
|
RFQ |
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IAUT260N10S5N019ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IAUT260N10S5N019ATMA1
Infineon Technologies AG
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-F8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 18 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 400 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 260 A | |
Drain-source On Resistance-Max | 0.0019 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 92 pF | |
JESD-30 Code | R-PSSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Pulsed Drain Current-Max (IDM) | 1040 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |