Datasheets
IAUT260N10S5N019ATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor,

Part Details for IAUT260N10S5N019ATMA1 by Infineon Technologies AG

Overview of IAUT260N10S5N019ATMA1 by Infineon Technologies AG

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Price & Stock for IAUT260N10S5N019ATMA1

Part # Distributor Description Stock Price Buy
DISTI # 59AC7034
Newark Mosfet, N-Ch, 100V, 260A, Hsof, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:260A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IAUT260N10S5N019ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 835
  • 1 $2.9400
  • 10 $2.9400
  • 25 $2.7000
  • 50 $2.7000
  • 100 $2.7000
  • 250 $2.4900
  • 500 $2.4900
  • 1,000 $2.4900
$2.4900 / $2.9400 Buy Now
DISTI # 86AK5137
Newark Mosfet, N-Ch, 100V, 260A, Hsof Rohs Compliant: Yes |Infineon IAUT260N10S5N019ATMA1 Min Qty: 2000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 2,000 $2.5000
$2.5000 Buy Now
DISTI # IAUT260N10S5N019ATMA1CT-ND
DigiKey MOSFET N-CH 100V 260A 8HSOF Min Qty: 1 Lead time: 18 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 5542
In Stock
  • 1 $4.9100
  • 10 $4.1230
  • 100 $3.3356
  • 500 $2.9650
  • 1,000 $2.5388
  • 2,000 $2.3905
$2.3905 / $4.9100 Buy Now
DISTI # 726-IAUT260N10S5N01
Mouser Electronics MOSFET MOSFET_(75V 120V( RoHS: Compliant 2050
  • 1 $4.7200
  • 10 $4.0100
  • 25 $3.8000
  • 100 $3.2900
  • 250 $3.2200
  • 500 $2.9100
  • 1,000 $2.5400
  • 2,000 $2.3800
$2.3800 / $4.7200 Buy Now
Future Electronics IAUT260Nxx Series 100 V 1.9 mOhm 260 A OptiMOS™-5 Power-Transistor-PG-HSOF-8-1 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel 8000
Reel
  • 2,000 $2.3500
$2.3500 Buy Now
Bristol Electronics   Min Qty: 1 125
  • 1 $5.1520
  • 6 $3.3488
  • 16 $2.5760
  • 50 $2.4044
  • 105 $2.2324
$2.2324 / $5.1520 Buy Now
Quest Components   100
  • 1 $6.9000
  • 6 $3.4500
  • 59 $3.2200
$3.2200 / $6.9000 Buy Now
Rochester Electronics MOSFET_(75V,120V( RoHS: Compliant Status: Active Min Qty: 1 275778
  • 1 $2.6500
  • 25 $2.6000
  • 100 $2.4900
  • 500 $2.3800
  • 1,000 $2.2500
$2.2500 / $2.6500 Buy Now
Ameya Holding Limited   Min Qty: 500 11816
  • 500 $5.9570
  • 1,000 $5.7794
$5.7794 / $5.9570 Buy Now
Chip 1 Exchange INSTOCK 1889
RFQ
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 2000 8000
  • 2,000 $3.3000
  • 8,000 $3.0800
$3.0800 / $3.3000 Buy Now

Part Details for IAUT260N10S5N019ATMA1

IAUT260N10S5N019ATMA1 CAD Models

IAUT260N10S5N019ATMA1 Part Data Attributes:

IAUT260N10S5N019ATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IAUT260N10S5N019ATMA1 Infineon Technologies AG Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-F8
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 400 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 260 A
Drain-source On Resistance-Max 0.0019 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 92 pF
JESD-30 Code R-PSSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 1040 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

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