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Part Details for IAUT200N08S5N023ATMA1 by Infineon Technologies AG
Overview of IAUT200N08S5N023ATMA1 by Infineon Technologies AG
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IAUT200N08S5N023ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
59AC7032
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Newark | Mosfet, Aec-Q101, N-Ch, 80V, Hsof, Transistor Polarity:N Channel, Continuous Drain Current Id:200A, Drain Source Voltage Vds:80V, On Resistance Rds(On):0.0018Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Rohs Compliant: Yes |Infineon IAUT200N08S5N023ATMA1 Min Qty: 2000 Package Multiple: 1 Date Code: 1 Container: Reel | 2000 |
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$1.6100 / $1.6600 | Buy Now |
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DISTI #
50AK1863
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Newark | Mosfet, N-Ch, 80V, 200A, Hsof, Channel Type:N Channel, Drain Source Voltage Vds:80V, Continuous Drain Current Id:200A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IAUT200N08S5N023ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 2546 |
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$1.7900 / $1.8800 | Buy Now |
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DISTI #
IAUT200N08S5N023ATMA1CT-ND
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DigiKey | MOSFET N-CH 80V 200A 8HSOF Min Qty: 1 Lead time: 18 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
6435 In Stock |
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$1.5531 / $3.3300 | Buy Now |
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DISTI #
726-IAUT200N08S5N023
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Mouser Electronics | MOSFET MOSFET_(75V 120V( RoHS: Compliant | 4106 |
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$1.5500 / $2.6700 | Buy Now |
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Future Electronics | 80Volt, 200Amp, 2.3mohm, 85QgnC, TO-LL 8L, OptiMOS™ 5 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 0Reel |
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$1.6100 | Buy Now |
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Bristol Electronics | 115 |
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RFQ | ||
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Rochester Electronics | IAUT200N08 - 75V-120V N-Channel Automotive MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 40314 |
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$1.5400 / $1.8100 | Buy Now |
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DISTI #
SP001688332
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EBV Elektronik | Transistor MOSFET N-CH 80V 200A 8-Pin HSOF T/R (Alt: SP001688332) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 19 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IAUT200N08S5N023ATMA1
IAUT200N08S5N023ATMA1 CAD Models
IAUT200N08S5N023ATMA1 Part Data Attributes:
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IAUT200N08S5N023ATMA1
Infineon Technologies AG
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Datasheet
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IAUT200N08S5N023ATMA1
Infineon Technologies AG
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 52 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 330 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 200 A | |
| Drain-source On Resistance-Max | 0.0023 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 68 pF | |
| JESD-30 Code | R-PSSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 200 W | |
| Pulsed Drain Current-Max (IDM) | 800 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |