Part Details for IAUT165N08S5N029ATMA2 by Infineon Technologies AG
Overview of IAUT165N08S5N029ATMA2 by Infineon Technologies AG
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IAUT165N08S5N029ATMA2
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
59AC7031
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Newark | Mosfet, Aec-Q101, N-Ch, 80V, Hsof, Transistor Polarity:N Channel, Continuous Drain Current Id:165A, Drain Source Voltage Vds:80V, On Resistance Rds(On):0.0024Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Rohs Compliant: Yes |Infineon IAUT165N08S5N029ATMA2 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1651 |
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$1.6200 / $3.1400 | Buy Now |
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DISTI #
IAUT165N08S5N029ATMA2CT-ND
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DigiKey | MOSFET N-CH 80V 165A 8HSOF Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1964 In Stock |
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$1.4099 / $3.0200 | Buy Now |
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DISTI #
726-IAUT165N08S5N029
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Mouser Electronics | MOSFET MOSFET_(75V,120V( RoHS: Compliant | 1001 |
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$1.4000 / $3.0200 | Buy Now |
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Future Electronics | 80Volt, 165Amp, 2.9mohm, 70QgnC, TO-LL 8L, OptiMOS™ 5 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 0Reel |
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$1.4400 | Buy Now |
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Rochester Electronics | IAUT165N08 - 75V-100V N-Channel Automotive MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 77287 |
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$1.4000 / $1.6400 | Buy Now |
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Ameya Holding Limited | Min Qty: 5 | 7990 |
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$2.8912 / $3.1994 | Buy Now |
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DISTI #
SP001585162
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EBV Elektronik | OptiMOS 80V 165A HSOF-8 (Alt: SP001585162) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 19 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 80V 165A 2.9m80A10V 167W 3.8V108uA 1PCSNChannel HSOF-8 MOSFETs ROHS | 20 |
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$2.6778 / $2.8226 | Buy Now |
Part Details for IAUT165N08S5N029ATMA2
IAUT165N08S5N029ATMA2 CAD Models
IAUT165N08S5N029ATMA2 Part Data Attributes:
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IAUT165N08S5N029ATMA2
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IAUT165N08S5N029ATMA2
Infineon Technologies AG
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 53 Weeks, 1 Day | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 225 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 165 A | |
| Drain-source On Resistance-Max | 0.0029 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 54 pF | |
| JESD-30 Code | R-PSSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 167 W | |
| Pulsed Drain Current-Max (IDM) | 660 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for IAUT165N08S5N029ATMA2
This table gives cross-reference parts and alternative options found for IAUT165N08S5N029ATMA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IAUT165N08S5N029ATMA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IAUT165N08S5N012 | Power Field-Effect Transistor, | Infineon Technologies AG | IAUT165N08S5N029ATMA2 vs IAUT165N08S5N012 |
| IAUS165N08S5N029ATMA1 | Power Field-Effect Transistor, | Infineon Technologies AG | IAUT165N08S5N029ATMA2 vs IAUS165N08S5N029ATMA1 |