Part Details for HYR1612840G-653 by Infineon Technologies AG
Overview of HYR1612840G-653 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Part Details for HYR1612840G-653
HYR1612840G-653 CAD Models
HYR1612840G-653 Part Data Attributes
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HYR1612840G-653
Infineon Technologies AG
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Datasheet
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HYR1612840G-653
Infineon Technologies AG
Rambus DRAM Module, 128MX16, CMOS, RIMM-184
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | DMA | |
| Package Description | DIMM, DIMM184,40 | |
| Pin Count | 184 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Mode | BLOCK ORIENTED PROTOCOL | |
| Additional Feature | SELF CONTAINED REFRESH | |
| Clock Frequency-Max (fCLK) | 600 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-XDMA-N184 | |
| Memory Density | 2147483648 bit | |
| Memory IC Type | RAMBUS DRAM MODULE | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 184 | |
| Number of Words | 134217728 words | |
| Number of Words Code | 128000000 | |
| Operating Mode | SYNCHRONOUS | |
| Organization | 128MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Equivalence Code | DIMM184,40 | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Qualification Status | Not Qualified | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 2.63 V | |
| Supply Voltage-Min (Vsup) | 2.37 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Terminal Form | NO LEAD | |
| Terminal Pitch | 1 mm | |
| Terminal Position | DUAL |
Alternate Parts for HYR1612840G-653
This table gives cross-reference parts and alternative options found for HYR1612840G-653. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYR1612840G-653, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| KMMR16R8GAC1-RG6 | Rambus DRAM Module, 128MX16, CMOS, 1.250 INCH HEIGHT, RIMM-184 | Samsung Semiconductor | HYR1612840G-653 vs KMMR16R8GAC1-RG6 |
| HYR1612830G-653 | Rambus DRAM Module, 128MX16, 2.1ns, CMOS, RIMM-184 | Infineon Technologies AG | HYR1612840G-653 vs HYR1612830G-653 |
| MC-4R256FKE6D-653 | Rambus DRAM Module, 128MX16, 53ns, MOS, RIMM-184 | Elpida Memory Inc | HYR1612840G-653 vs MC-4R256FKE6D-653 |
| MR16R1628MN1-CG6 | Rambus DRAM Module, 128MX16, CMOS, RIMM-184 | Samsung Semiconductor | HYR1612840G-653 vs MR16R1628MN1-CG6 |
| MR16R1628AF0-CG6 | Rambus DRAM Module, 128MX16, CMOS, RIMM-184 | Samsung Semiconductor | HYR1612840G-653 vs MR16R1628AF0-CG6 |
| HYR1612820G-653 | Rambus DRAM Module, 128MX16, 2.1ns, CMOS, RIMM-184 | Infineon Technologies AG | HYR1612840G-653 vs HYR1612820G-653 |